Fatih Ungan, Emine Öztürk, Yüksel Ergün, Ismail Sökmen
In this paper we have calculated the sub-band structure and the confinement potential of modulationdoped Ga 1−x Al x As-GaAs double quantum wells as a function of the doping concentration. The electronic properties of this structure were determined by self-consistent solutions of the Schrödinger and Poisson equations. To understand the effects of doping concentration on band bending, sub-band energies, and subband populations, the doping concentration on one right side of the structure is decreased while hold…
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