The thermoelectric power and the temperature coefficient of resistance of thin polycrystalline antimony films

Boyer, André; Deschacht, D.; Groubert, E.

doi:10.1016/0040-6090(81)90243-1

Cited by 23 publications

(5 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, the thermoelectric power of the P sample is mainly determined by the thermoelectric power of the Sb layer. 37 The thermoelectric power of the IA sample was found to be higher than that of the P sample at 420 K; it increased further as the post annealing temperature increased. Fig.…”

Section: Morphological Studiesmentioning

confidence: 91%

Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

Bala

Pannu

Gupta

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

An investigation was carried out to understand the phase evolution and study the structural, morphological, optical and electrical properties of Co-Sb alloys fabricated by two different approaches: (a) thermal annealing and (b) ion-beam mixing followed by post annealing. The as-deposited and 100 MeV Ag ion beam irradiated Co/Sb bilayer thin films were subjected to thermal annealing from 200 to 400 °C for 1 hour. The Rutherford backscattering spectrometry (RBS) results showed partial mixing for the thermally annealed films and complete mixing for the irradiated and post annealed films at 400 °C. The XRD and RAMAN measurements indicated the formation of Co-Sb alloy, with ∼70% concentration of CoSb3 phase in the irradiated post annealed sample at 400 °C. The band gaps of the annealed and post irradiated annealed Co-Sb alloys were determined using UV-visible spectroscopy. Electrical and thermoelectric power measurements were performed in the temperature range of 300-420 K. It was observed that the alloys formed by ion-beam induced mixing exhibited higher electrical conductivity and thermoelectric power than the as-deposited and thermally annealed Co/Sb bilayer thin films.

show abstract

Section: Morphological Studiesmentioning

confidence: 91%

Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

Bala

Pannu

Gupta

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…15 It can be observed that |S| ~ 174.5 μV/K is obtained at 45 K for FeSb 2 , and the maximum value of |S| is 357 μV/K at 45 K for FeSb 1.8 . At room temperature, both Sb and FeSb 2 have extremely similar positive values of S. 44 Therefore, the S values of all the samples barely vary as the Sb content decreases when the temperature is above 130 K.…”

Section: Electrical Transport Propertiesmentioning

confidence: 90%

“…The Seebeck coefficient is negative at low temperature but becomes positive at 115 K. |S| tends to increase with reducing Sb content at low temperature, which can be attributed to the negative S values of FeSb 2 at T < 130 K in contrast to the positive values of semimetal Sb single crystal. 44,45 However, the fact that the |S| of FeSb polycrystals approaches zero at low temperature prevents the Sb content in FeSb 2−x from being infinitely reduced. 15 It can be observed that |S| ~ 174.5 μV/K is obtained at 45 K for FeSb 2 , and the maximum value of |S| is 357 μV/K at 45 K for FeSb 1.8 .…”

Section: Electrical Transport Propertiesmentioning

confidence: 99%

High Thermoelectric Figure of Merit of FeSb2−x Thin Films via Defect Engineering for Low-Temperature Cooling Applications

Yang

Nkemeni

et al. 2021

J. Electron. Mater.

View full text Add to dashboard Cite

In general, both the thermal and electrical conductivity of metal/metalloid/semimetal materials decrease with increasing temperature; that is, these two parameters are in lockstep. Defect engineering has recently been proven to have tremendous potential for improving the thermoelectric performance of topological materials with two-dimensional layered structures. We have explored the effect of Sb point-defect engineering on the thermoelectric performance of FeSb 2−x (x = 0, 0.1, 0.2, and 0.3) thin films at low temperatures. Thin-film surface and grain-boundary phonon scattering contribute to the overall decrease in the thermal conductivity (κ) compared with single crystals. The current results indicate that FeSb 1.8 shows the lowest κ value, the main reason being that its nanostructure scatters more phonons over a wider wavelength range. In addition, the presence of Sb point defects enables an enhancement of the Seebeck coefficient (S) to 357 μV/K at 45 K for FeSb 1.8 thin films, coupled with an imperceptible decrease in the corresponding electrical conductivity (σ). Despite these results, the power factor (PF) is much lower than that of single crystals. The optimal peak thermoelectric figure of merit (ZT) of ~ 0.071 at 55 K is one order of magnitude higher than the ZT max of low-temperature FeSb 2 single crystals. These characteristics indicate that FeSb 2 thin films are promising materials for use in low-temperature thermoelectric devices.

show abstract

“…On the basis of the well-known FS theory the electrical conductivity of double-layer' thin metallic films crf was calculated [25], where scattering of conduction electrons a t the interface between the layers was taken into consideration, and where cr, , and uO2 are the bulk electrical conductivities of the base and overlayer, respectively. The functions F l ( K , P , Q) and F,(K, P , Q), which will be for simplicity writtcn as F, and F,, arc defined as follows: The temperature coefficient of the longitudinal and transverse strain coefficients of resistance By,, and By,, are given by (14) and (15) in the text. From (16) we can write for the film resistance Rf = l / ( G H ) .…”

Section: Temperature Coefficient Of Strain Coefficients Of Resistancementioning

confidence: 99%

Temperature coefficient of the strain coefficient of electrical resistivity of double-layer thin metallic films

Khater¹,

Elhiti²

1988

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

On the basis of the Fuchs‐Sondheimer theory, a general theoretical expression for the temperature coefficient of the longitudinal (transverse) strain coefficient of electrical resistance of doublelayer thin metallic films is derived. The derivation is performed upon the assumption that the differential variation in the film resistance with strain is temperature independent. The scattering of the conduction electrons at the surfaces of the film is described by the well known Fuchs specularity parameter P. On the interfaces beside the parameter P, a parameter Q is introduced which characterizes the probability that the conduction electrons are refracted, according to the law of refraction. Numerical calculations are made for an Au/Ag double‐layer film. The calculations show that the coefficients exhibit size effects.

show abstract

The thermoelectric power and the temperature coefficient of resistance of thin polycrystalline antimony films

Cited by 23 publications

References 7 publications

Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

High Thermoelectric Figure of Merit of FeSb2−x Thin Films via Defect Engineering for Low-Temperature Cooling Applications

Temperature coefficient of the strain coefficient of electrical resistivity of double-layer thin metallic films

Contact Info

Product

Resources

About