The temperature characteristics of bipolar transistors fabricated in CMOS technology

Wang, Guijie; Meijer, G.C.M.

doi:10.1016/s0924-4247(00)00460-x

Cited by 85 publications

(47 citation statements)

References 9 publications

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“…The temperature sensitivity of n is related to TCe(T) product, as can be seen in (17). It implies a dependence of emitter area confirmed through the experimental measurements of n(T) at low temperatures for different emitter areas as discussed by Wang and Meijer [20]. From the simulation results presented, it can be observed that the increase of n at low temperature also depends on bias conditions and technological parameters η and V G0 .…”

Section: Simulation Resultssupporting

confidence: 68%

“…The variation of emitter emission coefficient (n) with temperature has been measured and reported elsewhere [20,21]. At very low temperature (230 K-300 K), an increase of the value of n was found.…”

Section: Effect Of Emitter Emission Coefficientmentioning

confidence: 95%

“…For the comparison of the experimental and theoretical behavior of the diffusion potential with temperature, the theoretical values of V DE (T) by means of expression (20) were calculated, taking V DE (T r ) as the experimental value of V DE (T) at the lowest temperature of measurement and the value of V G0 = 1.185 V brought by Meijer [27] for the transistor MAT01. The results are plotted in Figure 7.…”

Section: Measurement Of V De the Determination Of V De (T)mentioning

confidence: 99%

See 2 more Smart Citations

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Nagy¹,

Polanco²,

Álvarez³

2011

Active and Passive Electronic Components

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The rising complexity of electronic systems, the reduction of components size, and the increment of working frequencies demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models, HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency. This paper presents some of the physical aspects that have not been studied so far, such as the expression of base-emitter voltage, including the emitter emission coefficient effect (n), physical explanation and simulation procedure, as well as a new extraction method for the diffusion potential V DE (T), based on the forward biased base-emitter capacitance, showing excellent agreement between experimental and theoretical results.

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Section: Simulation Resultssupporting

confidence: 68%

Section: Effect Of Emitter Emission Coefficientmentioning

confidence: 95%

Section: Measurement Of V De the Determination Of V De (T)mentioning

confidence: 99%

See 1 more Smart Citation

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Nagy¹,

Polanco²,

Álvarez³

2011

Active and Passive Electronic Components

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“…The solution was some form of negative feedback to stabilize the bias point. This also stabilizes AC gain [4].…”

Section: Effect Of Temperaturementioning

confidence: 74%

Reliability prediction of constant fraction discriminator using modified PoF approach

Thaduri

Verma²,

Vinod

et al. 2013

2013 Proceedings Annual Reliability and Maintainability Symposium (RAMS)

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“…Several methods have previously been used to read out the diodes' voltage and convert it into a temperature reading. One of the popular implementations, used at industry, finds the crossing point between the amplified differential voltage of the two diodes, which is directly proportional to the temperature, and the voltage of a single diode, which is inversely proportional to the temperature (see Figure 1) [8]. For a given temperature, there will be exactly one crossing point, which exists only for a specific diodes' current.…”

Section: Introductionmentioning

confidence: 99%

Untrimmed Low-Power Thermal Sensor for SoC in 22 nm Digital Fabrication Technology

Eitan

Cohen

2014

JLPEA

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Thermal sensors (TS) are essential for achieving optimized performance and reliability in the era of nanoscale microprocessor and system on chip (SoC). Compiling with the low-power and small die area of the mobile computing, the presented TS supports a wide range of sampling frequencies with an optimized power envelope. The TS supports up to 45 K samples/s, low average power consumption, as low as 20 μW, and small core Si area of 0.013 mm 2 . Advanced circuit techniques are used in order to overcome process variability, ensuring inaccuracy lower than ±2 °C without any calibration. All this makes the presented thermal sensor a cost-effective, low-power solution for 22 nm nanoscale digital process technology.

show abstract

The temperature characteristics of bipolar transistors fabricated in CMOS technology

Cited by 85 publications

References 9 publications

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Modeling and Extraction of Parameters Based on Physical Effects in Bipolar Transistors

Reliability prediction of constant fraction discriminator using modified PoF approach

Untrimmed Low-Power Thermal Sensor for SoC in 22 nm Digital Fabrication Technology

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