The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM

Abstract

Abstract. The forming process and SET-RESET mechanism of Pt/TiO2/Al resistive random access memory (RRAM) are investigated. Forming process was implemented by consecutive voltage sweep instead of one-step operation. After forming process, bidirectional self-rectifying characteristics was exhibited. In following SET and RESET operation with ±3V bias, this device can be used as a selector-less device without additional process steps. The characteristics of normal resistive switching is explained by analytical model and verified through simulation.