The selective synthesis of nickel germanide nanowires and nickel germanide seeded germanium nanowires within a solvent vapour growth system

Linear heterostructured Ni2Si/Si nanowires with abrupt interfaces synthesised in solution

“…Reactions were carried out within a high boiling point solvent system previously reported, with growth occurring via a SLS growth mechanism. [30][31][32][33][34][35]37 A 100 ml custom-made Pyrex, round bottomed flask containing 8 ml of squalane (99% Aldrich) was used as the reaction vessel. The growth substrate was placed vertically in to the round bottomed flask which was attached to a Schlenk line setup via a water condenser.…”

“…TMS NW growth in alternative systems has also been demonstrated by Tuan and co-workers who synthesized Cu3Si NWs by thermally decomposing phenylsilane in a supercritical fluid based system. 29 The high boiling point solvent based system that we have developed for Si and Ge NW growth, [30][31][32][33][34][35] is also compatible with TMS NW growth and was used to grow Cu15Si4 NWs from bulk Cu foil, using phenylsilane as the Si precursor. 36 A limitation of Si feed approaches to-date is that it has not been possible to introduce more complexity into the NWs.…”

Facile Access to an Active γ‐NiOOH Electrocatalyst for Durable Water Oxidation Derived From an Intermetallic Nickel Germanide Precursor

“…Thus, it is the most favored contact material in complementary to metal‐oxide‐semiconductor devices [10a,d, 12] . Until now, however, the synthesis of NiGe nanomaterials is challenging and has been rarely reported [10b] . Further, its application for electrocatalysis has not been perceived so far.…”

Direct Synthesis of Alloyed Si1–xGex Nanowires for Performance-Tunable Lithium Ion Battery Anodes

“…Here, we report the direct synthesis of Sn seeded Si 1– x Ge x alloy NWs, in high densities from stainless steel current collectors, in a single step wet chemical reaction, using a high boiling point solvent system. − Different Si to Ge atomic ratios (Si 0.20 Ge 0.80 to Si 0.67 Ge 0.33 ) can be obtained by balancing the ratios and reactivities of the precursors that are simultaneously introduced into the flask in a single injection. The electrochemical performance of the Si 1– x Ge x NWs were studied in both half-cell and full-cell configurations with the most Si rich anodes displaying the highest capacities and the more Ge-rich anodes showing the best capacity retention at faster charge and discharge rates.…”