The Role of Sputtering Current on the Optical and Electrical Properties of Si-C Junction

Abstract

The effect of sputtering current that flow in a carbon rod on the structural and transport properties of Si-C junction is studied. Si-C junction is fabricated by plasma sputtering in Argon gas atmosphere without catalysts with thickness of 20, 40 and 60 nm. Images of the specimen by scanning electron microscope (SEM) and atomic force microscope (AFM) show that the carbon layer is as carbon nanotubes with diameters about 20-30 nm. X-ray and Raman spectrums show peak characteristics of the carbon nanotubes, the G and D bands appear for all thicknesses indicating free of defect carbon nanotubes. Two parameters about the thickness of the carbon layer and the sputtering current for different thicknesses and currents were studied. Nanotubes evidence was clear. We noticed that the sputtering current and thickness of layers affect the structure of CNT layer leading to the formation of grains. Increasing plasma current led to decrease grain formation however increasing thickness ends to increase grain size; moreover it led to amorphous structure formation and this was proved through X-ray, Raman spectra and AFM images.

Effect of Heat and Light on Electrical Properties of Si-CNT Junction

“…In Figure 5, Raman spectra of Carbon layers with thicknesses (a-20, b-40 and c-60 nm) using 70 A sputtering current and different time periods, are shown which give clear evidence of formation of the CNT tubes because the appearance of the D band 1357 cm -1 and G 1588 cm -1 proves the existence of CNT (Costa et.al,2008). Figure 3 shows SEM images of Carbon layers with thicknesses (20, 40 and 60 nm) using 70 A sputtering current and different time periods (Uonis et. al, 2014;Aksak et.…”

“…This leads to the result that, current decreases, with increasing CNT layer thickness. Figure 4 shows AFM images of CNT layers with thicknesses (20, 40 and 60 nm) and 70 A sputtering current (Uonis et. al, 2014;Zhang, 2009).…”

“…Sputtering can occur irrespective of the particle charge or type. The bombarding particles can be atoms, electrons, ions or even molecules (Seshan, 2002;Uonis et. al, 2014).…”

“…In this study the Si-CNT junction was prepared using the plasma sputtering method with different thicknesses of the carbon nano tube layers (20, 54, 63 nm) without using catalyst (Uonis et. al, 2014).…”

“…SEM images of Carbon layers with thicknesses (20, 40 and 60 nm) using 70 A sputtering current and different time periods(Uonis et. al, 2014; Aksak et.…”