The Role of Near-Interface Traps in Modulating the Barrier Height of SiC Schottky Diodes

A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms

“…and α and β are defined in Table 1. Equation (20) will have a complex value if the electric field is too small. The minimum electric field which will give a real value is:…”

“…To prevent complex values, γ in (8) is defined by two cases, based on whether the electric field is less than or greater than the value given by (22). The associated maximum energy for which (20) and 21give a real valued solution [i.e., when the electric field equals (22)] is given by (9).…”

“…We can use (20) now to evaluate the current as we did for the field emission case. The equations for this are given in (5) and (6), where the standard deviation has been taken to be X 2 kT.…”

The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications

“…In real metal-semiconductor contacts, the existence of trapped charge ( ) at distance from the metal surface creates an electric field, ⁄ , which causes bending of the energy bands by the factor ⁄ [12]. The traps that are responsible for this additional component of the barrier height are usually referred to as interface traps [12]; however, we have suggested recently the use of the term "near interface traps", to highlight the fact that the charge associated with pure interface traps ( = 0) is fully compensated by the charge in the metal and, hence, does not create electric field and does not contribute to the band bending [13].…”

“…The currents → and → , given by Eqs. (13) and (14), respectively, would be equal and the net current at zero bias would be zero if * = * . However, there is no reason for this condition to be valid in different materials, such as the metal and the semiconductor in the case of Schottky diodes.…”