2019
DOI: 10.1002/adfm.201907507
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The Role of Morphology in Optically Switchable Transistors Based on a Photochromic Molecule/p‐Type Polymer Semiconductor Blend

Abstract: The correlation between morphology and optoelectronic performance in organic thin-film transistors based on blends of photochromic diarylethenes (DAE) and poly(3-hexylthiophene) (P3HT) is investigated by varying molecular weight (M w = 20-100 kDa) and regioregularity of the conjugated polymer as well as the temperature of thermal annealing (rt-160 °C) in thin films. Semicrystalline architectures of P3HT/DAE blends comprise crystalline domains, ensuring efficient charge transport, and less aggregated regions, w… Show more

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Cited by 22 publications
(38 citation statements)
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References 49 publications
(56 reference statements)
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“…This can be attributed to the higher quantum yield of photocyclization (0.39 ± 0.01) than that of photocycloreversion (0.02 ± 0.003) as shown in Figure S3 and Table S1, Supporting Information. [41][42][43][44] Furthermore, the thin-film absorption spectra of the DAE showed the same tendency as that described in Figure S4, Supporting Information. In this case, photocyclization began at 13.7 mW cm −2 , indicated by the generally slower dynamics of diarylethenes in solid-state films than in the solution.…”
Section: Optoelectrical Properties Of Dabsupporting
confidence: 69%
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“…This can be attributed to the higher quantum yield of photocyclization (0.39 ± 0.01) than that of photocycloreversion (0.02 ± 0.003) as shown in Figure S3 and Table S1, Supporting Information. [41][42][43][44] Furthermore, the thin-film absorption spectra of the DAE showed the same tendency as that described in Figure S4, Supporting Information. In this case, photocyclization began at 13.7 mW cm −2 , indicated by the generally slower dynamics of diarylethenes in solid-state films than in the solution.…”
Section: Optoelectrical Properties Of Dabsupporting
confidence: 69%
“…Estimation of Quantum Yield: Photoisomerization quantum yield is estimated following the procedure in a previous study, [41][42][43][44] where N A is the Avogadro number, ε is the absorption coefficient, A t is the absorption value after irradiation sample for time interval t, (1−10 − A t ) is the fraction of absorbed photons, and I is the photon flux. [41,42,44] The unit correction factor is used such that the above-mentioned equation is applicable for estimating a quantum yield of photoisomerization in solid state. The calculated absorption coefficients (ε) for DAE were 7.6 × 10 4 L mol −1 cm −1 for the open form and 4.8 × 10 4 L mol −1 cm −1 for the closed form.…”
Section: Methodsmentioning
confidence: 99%
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“…Note that direct spin‐coating of P(VDF‐TrFE) solution onto the DAE/WSe 2 chip is avoided since the solvent (methylethylketone) would remove DAE molecules, and moreover, the formation of P(VDF‐TrFE) film requires curing at 140 °C for 2 h to increase its crystallinity, which may deteriorate the switching capacity of the DAE molecules. [ 23 ]…”
Section: Mechanism and Device Fabricationmentioning
confidence: 99%