THE PRESSURE OF Ga2O OVER GALLIUM-Ga2O3 MIXTURES

Frosch, C. J.; Thurmond, C. D.

doi:10.1021/j100811a027

Cited by 82 publications

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“…A Ga/Ga 2 O 3 powder mixture (4:1 molar proportions) was used as the starting material for obtaining Ga 2 O. [10] Appropriate amounts of Ga 2 O, P, and CNTs were vacuumsealed in a thick quartz capsule, which was heated to 1000 C for 1 h in a furnace. The proportion of phosphorus was greater than the stoichiometric composition by 20 %, in order to supply enough phosphorus pressure during the experiment.…”

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confidence: 99%

“…[6] During the last few years, since the discovery of 1D carbon nanotubes, several important approaches to fabricating 1D nanostructures have been developed. [7] Carbon nanotubes [8] have been used as templates for fabrication of carbide nanorods (TiC, SiC, NbC, BCx) [9] or nitride nanorods (GaN, Si 3 N 4 ) [10] at high reaction temperatures. Carbon nanotubes have also been filled with metals [11] or metal oxides [12] using the capillary effect to fabricate 1D nanostructures from the molten state.…”

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Synthesis of Gallium Phosphide Nanorods

et al. 2000

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Synthesis of Gallium Phosphide Nanorods

et al. 2000

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“…The two most widely investigated approaches to date have been solution growth [5][6][7][8][9][10] and vapor phase transport [11][12][13][14][15]. The success of these methods has been limited to small crystals.…”

Section: Sitar 15 Ncsumentioning

confidence: 99%

Growth of Single Crystals and Fabrication of GaN and AlN Wafers

Sitar¹,

Davis²

2000

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, oatherina and maintainina the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this gathering and maintaining the data needed, and completing and reviewing collection of information, including suggestions for reducing this burden to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302, and to the Office of Management and Budget Paperwork Reduction Project (0704-0188), Washington, DC 20503, REPORT TYPE AND DATES COVERED 1. AGENCY USE ONLY (Leave blank)2. REPORT DATE July, 2000Semiannual: 1/1/00 -6/30/00 TITLE AND SUBTITLE Growth of Single Crystals and Fabrication of GaN and A1N Wafers AUTHOR(S)Z. Sitar, R. F. Davis PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)North Carolina State University Hillsborough Street Raleigh, NC 27695 GaN and A1N single crystals were grown from the vapor phase by evaporation of gallium or aluminum metals under an ammonia or nitrogen flow in a high temperature reactor. A growth rate of 500 |im/hr in the c direction was achieved for GaN while the growth rates for A1N were as high as a few millimeters per hour. The crystal size reached 3 mm for GaN and up to 15 mm for A1N. For both materials, the crystal aspect ratio (c/a) could be controlled by temperature and partial pressure of reactants. The resulting crystals were transparent and of excellent crystalline quality, as confirmed by x-ray diffraction, Raman scattering, and transmission electron microscopy studies. Photoluminescence studies on GaN conducted at 77 K showed a sharp emission peak centered at 359 nm. Time dependent photoluminescence measurements revealed optical metastability in bulk GaN. SPONSORING/MONITORING AGENCY NAMES(S) AND ADDRESS(ES)Sponsoring SUBJECT TERMSGaN, A1N, bulk crystal growth, growth from vapor phase, photoluminescence, optical absorption, Raman, SIMS. growth runs were performed using Al metal and nitrogen gas, and yielded high-quality A1N crystals of up to 1 cm size. A complete study of the relevant growth parameters is currently in progress; initial results on the influence of temperature on crystal size, morphology and quality will be reported below. EquipmentThe growth reactor consists of a vacuum chamber containing a 2.25" diameter reaction tube made of hot-pressed BN. The reaction tube is heated by a cylindrical, resistive graphite heater (6.5" long) capable of heating the reaction zone up to 2400°C (-12 kW electrical power). The heater assembly is encapsulated in a hot-pressed BN cylinder (wall thickness 0.25"). Porous graphite heat insulation separates the heater assembly from the water-cooled walls of the vacuum chamber. A schematic cross-section of the reactor is shown in Fig A set of mass-flow controllers allows accurate contr...

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“…For Ga vaporization studies, Speiser and Johnston [14] and Cochran and Foster [15] measured the vapor pressure of liquid Ga using the Knudsen method and Frosch and Thurmond [16] measured vaporization from a Ga (1)-Ga 2 O 3 mixture by the transportation technique. Speiser and Johnston determined that, in previous studies, the purity of Ga or the alloying of gallium with platinum and Cr-Ni effusion cells might have resulted in scattered data and lower vapor pressures.…”

Section: Introductionmentioning

confidence: 99%

“…Frosch and Thurmond [16] reported on the vapor pressure of gallium suboxide (i.e., Ga 2 O) from a Ga (1)-Ga 2 O 3 mixture contained in a silica crucible according to the following reaction: [2] The vapor pressure of Ga 2 O ranged from 0.0158 kPa (1.56 ϫ 10 Ϫ4 atm) to 1 kPa (9.9 ϫ 10 Ϫ3 atm) for temperatures from 1073 to 1273 K, respectively. Seybolt [19] noted that the Gibbs free energy of formation per atom of oxygen for Ga 2 O 3 and Ga 2 O (g) (of course, at unit activity for the species) equilibrates at approximately 1570 K, although the free energy of Ga 2 O (g) shifts depending on its partial pressure.…”

Section: Introductionmentioning

confidence: 99%

Oxidation of an Fe-Cr-Al-Y-Zr alloy forming an alumina scale in a Ga2O atmosphere at 1473 K

Vasquez

Bronson

2005

Metall Mater Trans A

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The oxidation of an Fe-Cr-Al-Y-Zr alloy exposed to a Ga atmosphere at 1473 K has been investigated by an encapsulation method. A Ga/Ga 2 O 3 mixture was placed within the quartz ampoules to establish the Ga 2 O and the O 2 partial pressures enveloping a Fe-Cr-Al-Y-Zr alloy (specifically, 72.8Fe-22Cr-5Al-0.1Y-0.1Zr by mass pct), which contains minor additions of yttrium and zirconium to improve scale adherence. A deoxidized Ar atmosphere surrounded the ampoules to control oxygen permeation through the silica wall. The Fe-Cr-Al-Y-Zr alloy developed an Al 2 O 3 scale growing parabolically and protecting the substrate from gallium attack for 5, 10, 20, 40, and 50 days, as examined with a scanning electron microscope (SEM) and energy dispersive X-ray (EDX) analysis. The Ga 2 O atmosphere decomposes to liquid Ga and Ga 2 O 3 on the alloy surface, but gallium species do not penetrate the oxide layer according to the limits of detection for EDX analysis. Defect equilibria incorporating Ga 2 O are presented with neutral interstitial oxygen to explain the oxidation of the Fe-Cr-Al-Y-Zr alloy.

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THE PRESSURE OF Ga₂O OVER GALLIUM-Ga₂O₃ MIXTURES

Cited by 82 publications

References 0 publications

Synthesis of Gallium Phosphide Nanorods

Synthesis of Gallium Phosphide Nanorods

Growth of Single Crystals and Fabrication of GaN and AlN Wafers

Oxidation of an Fe-Cr-Al-Y-Zr alloy forming an alumina scale in a Ga2O atmosphere at 1473 K

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