The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Knobloch, Theresia; Illarionov, Yu. Yu.; Ducry, Fabian; Schleich, Christian; Wachter, Stefan; Watanabe, Kenji; Taniguchi, Takashi; Mueller, Thomas; Waltl, Michael; Lanza, Mario; Vexler, M. I.; Luisier, Mathieu; Grasser, T.

doi:10.1038/s41928-020-00529-x

Cited by 215 publications

(181 citation statements)

References 102 publications

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“…Although hexagonal boron nitride ( h ‐BN) with vdW nature has been used for many 2D nanoelectronic devices, the low dielectric constant (≈5) makes it unsuitable for use as ultrathin gate insulator in FETs with low power consumption. [ 17 ] Therefore, exploring new 2D high‐ k dielectrics with vdW nature is highly desirable.…”

Section: Introductionmentioning

confidence: 99%

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

Zhu

Qin

Huang

et al. 2021

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2D van der Waals (vdW) semiconductors hold great potentials for more‐than‐Moore field‐effect transistors (FETs), and the efficient utilization of their theoretical performance requires compatible high‐k dielectrics to guarantee the high gate coupling efficiency. The deposition of traditional high‐k dielectric oxide films on 2D materials usually generates interface concerns, thereby causing the carrier scattering and degeneration of device performance. Here, utilizing a space‐confined epitaxy growth approach, the authors successfully obtained air‐stable ultrathin indium phosphorus sulfide (In2P3S9) nanosheets, the thickness of which can be scaled down to monolayer limit (≈0.69 nm) due to its layered structure. 2D In2P3S9 exhibits excellent insulating properties, with a high dielectric constant (≈24) and large breakdown voltage (≈8.1 MV cm−1) at room temperature. Serving as gate insulator, ultrathin In2P3S9 nanosheet can be integrated into MoS2 FETs with high‐quality dielectric/semiconductor interface, thus providing a competitive electrical performance of device with subthreshold swings (SS) down to 88 mV dec−1 and a high ON/OFF ratio of 105. This study proves an important strategy to prepare 2D vdW high‐k dielectrics, and greatly facilitates the ongoing research of 2D materials for functional electronics.

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Section: Introductionmentioning

confidence: 99%

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

Zhu

Qin

Huang

et al. 2021

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“…In this section, we first summarize several typical nanomaterials with different dimensions and their mainstream synthesis methods and then highlight their advantages in optoelectronic applications as shown in Figure 2. The discovery of graphene with a single layer of carbon atoms [44] accelerates the development of diverse 2D materials such as black phosphorus (BP), [45] TMDs, [46][47][48] hBN, [49] and Mxene, [50,51] which covers semiconductors, insulators, and conductors. During the past decades, 2D materials with excellent light absorption, high carrier mobility, and thickness-dependent band structure show great potential in the field of optoelectronic devices including photodetectors, light-emitting diodes, photovoltaic devices, and optical modulators.…”

Section: Low-dimensional Materialsmentioning

confidence: 99%

Mixed‐Dimensional Van der Waals Heterostructures Enabled Optoelectronic Synaptic Devices for Neuromorphic Applications

Sun

Ding

Xie

2021

Adv Funct Materials

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Neuromorphic devices provide a hardware platform to implement synaptic functions into artificial electronic devices, which opens a new way to overcome the von Neumann bottleneck from the device level. Optoelectronic synaptic devices are expected to break the limitations of electrically stimulated synapses due to wider bandwidth, higher speed, and lower crosstalk. However, most optoelectronic synaptic devices are enabled by the defect-dominant photogenerated carrier trapping/de-trapping. Therefore, designable device structure and controllable synaptic functions are urgently desirable in optoelectronic synaptic devices. Among various functional materials, low-dimensional materials exhibit excellent optical and electrical properties and can be easily applied to build van der Waals (vdW) heterostructures with ideal surface characteristics. Herein, the basic morphology and characteristics of lowdimensional materials have been introduced and the typical constitution of mixed-dimensional (MD) vdW heterostructures has been reviewed to highlight their unique light-matter interaction. Then, optoelectronic synaptic devices are classified into three categories by the role of light as input, modulated and output signals based on different photoelectric conversion mechanisms. Furthermore, a bridge between neuromorphic devices and practical applications is established to illustrate their potential in neuromorphic systems. Finally, great challenges and possible study directions are presented to guide the development of MD vdW heterostructures in future neuromorphic systems.

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“…In 2D material FETs, various isolators have been investigated such as thermally grown SiO2, high-k oxides (Al2O3, HfO2, etc. ), crystalline CaF2, and 2D h-BN [174][175][176][177][178]. In general, an isolator with large permittivity and bandgap could provide more induced holes or electrons which means a higher level p-/n-type modulation.…”

Section: Volatile Electrostatic Modulationmentioning

confidence: 99%

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

Ouedraogo

et al. 2021

Nano Res.

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Two-dimensional layered transition metal dichalcogenides (TMDCs) have demonstrated a huge potential in the broad fields of optoelectronic devices, logic electronics, electronic integration, as well as neural networks. To take full advantage of TMDC characteristics and efficiently design the device structures, one of the most key processes is to control their p-/n-type modulation. In this review, we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring, substitutional doping, surface charge transfer, chemical intercalation, electrostatic modulation, and dielectric interface engineering. The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics. Finally, challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.

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The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Cited by 215 publications

References 102 publications

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

Mixed‐Dimensional Van der Waals Heterostructures Enabled Optoelectronic Synaptic Devices for Neuromorphic Applications

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

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The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Cited by 215 publications

References 102 publications

2D Indium Phosphorus Sulfide (In2P3S9): An Emerging van der Waals High‐k Dielectrics

2D Indium Phosphorus Sulfide (In2P3S9): An Emerging van der Waals High‐k Dielectrics

Mixed‐Dimensional Van der Waals Heterostructures Enabled Optoelectronic Synaptic Devices for Neuromorphic Applications

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

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Product

Resources

About

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics

2D Indium Phosphorus Sulfide (In₂P₃S₉): An Emerging van der Waals High‐k Dielectrics