The occupied electronic structure of ultrathin boron doped diamond

Pakpour-Tabrizi, A. C.; Schenk, Alex; Holt, Ann Julie; Mahatha, S. K.; Arnold, Fabian; Bianchi, Marco; Jackman, Richard B.; Butler, J.E.; Vikharev, A. L.; Miwa, Jill A.; Hofmann, Philip; Cooil, Simon; Wells, Justin W.; Mazzola, Federico

doi:10.1039/c9na00593e

Cited by 9 publications

(13 citation statements)

References 71 publications

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“…We have used standard data reported in the literature for DLC and calculated the thicknesses of all of the ID and BDD samples. 8 The optical depth (OD) of the ID and BDD samples is calculated using the equation given below. 32…”

Section: Resultsmentioning

confidence: 99%

“…6,7 SIMS and XPS are valuable, surface-sensitive, and quantitative, and are commonly adopted for semiquantification of dopants. 8,9 Nevertheless, these methods are slow and difficult to apply to provide a full depth analysis of boron distribution within the diamond lattice. Transmission electron microscopy is a compelling technique for materials characterization and EELS provides valuable analytical insight into the chemical nature of dopants and quantification of cross-section samples.…”

Section: Introductionmentioning

confidence: 99%

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Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

Sharma

Girão

Chapon

et al. 2022

ACS Appl. Mater. Interfaces

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Accurate determination of the effective doping range within diamond thin films is important for fine-tuning of electrical conductivity. Nevertheless, it is not easily attainable by the commonly adopted techniques. In this work, pulsed RF glow discharge optical emission spectrometry (GD-OES) combined with ultrafast sputtering (UFS) is applied for the first time to acquire elemental depth profiles of intrinsic diamond coatings and boron content bulk distribution in films. The GD-OES practical advances presented here enabled quick elemental profiling with noteworthy depth resolution and determination of the film interfaces. The erosion rates and layer thicknesses were measured using differential interferometric profiling (DIP), demonstrating a close correlation between the coating thickness and the carbon/hydrogen gas ratio. Moreover, DIP and the adopted semiquantification methodology revealed a nonhomogeneous bulk distribution of boron within the diamond crystalline structure, i.e., boron doping is both substitutional and interstitial within the diamond framework. DIP measurements also showed that effective boron doping is not linearly correlated to the increasing content introduced into the diamond coating. This is a finding well supported by X-ray diffraction (XRD) Rietveld refinement and X-ray photoelectron spectroscopy (XPS). This work demonstrates the advantage of applying advanced GD-OES operation modes due to its ease of use, affordability, accuracy, and high-speed depth profile analysis capability.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Advances in RF Glow Discharge Optical Emission Spectrometry Characterization of Intrinsic and Boron-Doped Diamond Coatings

Sharma

Girão

Chapon

et al. 2022

ACS Appl. Mater. Interfaces

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“…However, diamond is a peculiar case where there are a lack of free electron like final states (FEFS) available when using low excitation energies, therefore necessitating the use of higher photon energies [12]. Several unsuitable energy ranges have been detailed [19], particularly the use of photon energies typically available in home laboratories, such as the He(I) and He(II) emission lines at 21.2 eV and 40.08 eV respectively. Our ARPES measurements are recorded from a plane close to the centre of a 3D Brillouin zone (BZ) for ease of comparison to the DFT calculations.…”

Section: A Experimental Detailsmentioning

confidence: 99%

“…The growing demand for miniaturisation has also led to increased interest in the nanoscale properties of diamond [19] and the production of diamond-graphene (sp 3 -sp 2 ) interfaces, investigated both experimentally [20][21][22][23][24][25][26][27][28][29] and through DFT studies [30][31][32][33]. There now exists a multitude of graphene growth systems with the ability to produce high quality epitaxial graphene.…”

Section: Introductionmentioning

confidence: 99%

The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface

Reed,

Bathen,

Ash

et al. 2022

Preprint

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The evolution of the diamond (111) surface as it undergoes reconstruction and subsequent graphene formation is investigated with angle-resolved photoemission spectroscopy, low energy electron diffraction, and complementary density functional theory calculations. The process is examined starting at the C(111)-(2 × 1) surface reconstruction that occurs following detachment of the surface adatoms at 920 °C, and continues through to the liberation of the reconstructed surface atoms into a free-standing monolayer of epitaxial graphene at temperatures above 1000 °C. Our results show that the C( 111)-(2 × 1) surface is metallic as it has electronic states that intersect the Fermi-level. This is in strong agreement with a symmetrically π-bonded chain model and should contribute to resolving the controversies that exist in the literature surrounding the electronic nature of this surface. The graphene formed at higher temperatures exists above a newly formed C( 111)-(2 × 1) surface and appears to have little substrate interaction as the Dirac-point is observed at the Fermi-level. Finally, we demonstrate that it is possible to hydrogen terminate the underlying diamond surface by means of plasma processing without removing the graphene layer, forming a graphene-semiconductor interface. This could have particular relevance for doping the graphene formed on the diamond (111) surface via tuneable substrate interactions as a result of changing the terminating species at the diamond-graphene interface by plasma processing.

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“…The dispersion of bands is noticeable and qualitatively comparable with measured ARPES images in boron-doped diamond. [74][75][76] However, doping lifts the degeneracy and lowers the Fermi energy below the VBM, making it difficult to observe polaronic features, the plateau or even the QP peak at the VBM. The only observation we have found of experimental polaronic in ARPES is in surface hydrogenterminated on diamond, 12 showing several satellite signatures offset by multiples of o LO from the QP.…”

Section: Spectral Function and Arpes At Finite Temperaturementioning

confidence: 99%