The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

Tombak, Ahmet; Benhaliliba, M.; Ocak, Yusuf Selim; Kılıçoğlu, Tahsin

doi:10.1016/j.rinp.2015.11.001

Cited by 79 publications

(18 citation statements)

References 30 publications

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“…The n value is unity (i.e., n = 1) for an ideal P-N diode but in the present work, the n values are obtained as more than unity.The obtained result of n value is comparable to the reported value of 3.5, for a reactive magnetron sputtering deposited Ag/n-WO 3 /p-Si Schottky diode 31 . The results suggest that the non-ideal behavior Figure.…”

Section: I-v Characterization Of N-wo 3 /P-si Junction Diodesupporting

confidence: 88%

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Shanmugasundaram¹,

Thirunavukkarasu²,

Ramamurthy³

et al. 2017

Orient. J. Chem

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The n-type tungsten oxide (WO 3 ) polycrystalline thin films have been prepared at an optimized parameters (0.20M, 5 ml and 500 o C) using jet nebulizer spray pyrolysis (JNSP) technique. Such prepared WO 3 films were characterized by XRD, SEM, EDAX, UV-vis from I-V. The XRD pattern of the optimized WO 3 film reveals the monoclinic structure. The SEM and EDAX images shows that the surface morphological variations and elements present were confirmed. The optical properties were recorded by UV-vis spectrum and the maximum band gap value was observed as 3.86 eV for 500°C. The maximum conductivity of the prepared WO 3 was recorded as 1.201 x 10 -8 S/cm from I-V characterization for 500°C.Using J-V plot, the diode parameters of n-WO 3 /p-Si prepared at 500°C with 0.2 M and 5 ml were measured under dark and illumination. The ideality factor (n) and barrier height (Φ b ) values of n-WO 3 /p-Si diode are obtained as 5.8 and 0.80 eV in dark and 3.9 and 0.81 eV under illumination.

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Section: I-v Characterization Of N-wo 3 /P-si Junction Diodesupporting

confidence: 88%

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Shanmugasundaram¹,

Thirunavukkarasu²,

Ramamurthy³

et al. 2017

Orient. J. Chem

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“…Recently, Wang et al predicted that the indirect band gap of Cu 4 O 3 is 1.59 eV [4]. As for CuO, the type of band gap of CuO remains controversial; in some studies its band gap is suggested to be direct [16,17,18], but it is considered that its band gap is indirect in other studies [1,19,20], and its accurate band gap value is still a greater challenge for electronic structure calculations.…”

Section: Introductionmentioning

confidence: 99%

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

et al. 2018

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P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (VCPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu2O, Cu4O3, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu2O, Cu4O3, and CuO thin films are (3.7 ± 0.3) × 103 Ω·cm, (1.1 ± 0.3) × 103 Ω·cm, and (1.6 ± 6) × 101 Ω·cm, respectively. All the measured results above are consistent.

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“…However, the exploiting of CAFM-IV curves in CIS and doped CIS has been scarcely done. CAFM-IV curves carry additional information on the surface states and grain boundaries and physical information such as the barrier height, series resistance and ideality factor of the diode-like junction between the tip and sample which can be modeled with the appropriate model [14]. In this work, CuInSe 2 /Cu films were prepared by electrodeposition and Li, K, Na or Cs ions were added during the growth.…”

Section: Introductionmentioning

confidence: 99%

Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

et al. 2016

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Abstract:The local electrical response in alkaline-doped CuInSe 2 films prepared by single-step electrodeposition onto Cu substrates was studied by current-sensing atomic force microscopy. The CuInSe 2 (CIS) films were prepared from single baths containing the dopant ions (Li, Na, K or Cs) and were studied by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and photocurrent response. Increased crystallinity and surface texturing as the ion size increased were observed, as well as an enhanced photocurrent response in Cs-doped CIS. Li-and Na-doped films had larger conductivity than the undoped film while the K-and Cs-doped samples displayed shorter currents and the current images indicated strong charge accumulation in the Kand Cs-doped films, forming surface capacitors. Corrected current-sensing AFM IV curves were adjusted with the Shockley equation.

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The novel transparent sputtered p-type CuO thin films and Ag/p-CuO/n-Si Schottky diode applications

Cited by 79 publications

References 30 publications

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

Growth and Characterization of Jet Nebulizer Spray Deposited n-type WO3 thin films for Junction Diode Application

The Phase Evolution and Physical Properties of Binary Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Local Electrical Response in Alkaline-Doped Electrodeposited CuInSe2/Cu Films

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