Mullite Bi 2 Fe 4 O 9 thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates by using a chemical solution deposition method. The deposited Bi 2 Fe 4 O 9 thin films were annealed at a series of temperatures in the range 700-850°C in an oxygen atmosphere using a rapid thermal annealing process. The effect of the annealing temperature on the structural, electrical and multiferroic properties of the Bi 2 Fe 4 O 9 thin films was investigated. The results showed that the Bi 2 Fe 4 O 9 thin film that was annealed at 800°C exhibits a well-crystallized orthorhombic phase with the complete absence of secondary phases, in marked contrast to the thin films that were annealed at 700, 750, and 850°C for which the formation of secondary phases was observed. Moreover, the Bi 2 Fe 4 O 9 thin film that was annealed at 800°C was found to exhibit a low leakage current density and enhanced multiferroic properties, both of which are indicative of the formation of a pure mullite phase with a stable structure.