The Investigation on the Electrical Properties of a-SiCO:H as a Diffusion Barrier to Copper

Abstract

In this paper, we attempted to deposit low dielectric constant a-SiCO:H as a copper diffusion barrier by PECVD method using a organosilicon precursor, bis-trimethylsilylmethane (BTMSM, C7H20Si2). The dielectric constant of a-SiCO:H films increases from 2.5 to 3.2 with increasing the deposition temperature from room temperature to 280°C. Refractive index gradually increases with deposition temperature, indicating that film has a denser structure as well as a higher dielectric constant. FT-IR and XPS analyses resulted that chemical structure of Si atoms in the films changed from D moiety to T moiety with increasing the deposition temperature. The electrical conduction mechanism of the a-SiCO:H films was determined to be Schottky emission current at high field region (E > 0.4MV/cm).

Electronic structure and oxygen reduction on tunable [Ti(IV)Pc]2+ and Ti(II)Pc titanyl-phthalocyanines: A quantum chemical prediction

“…Moreover, many different non-noble metal catalysts have been thoroughly investigated for their utility in the oxygen reduction reaction (ORR). Some of these non-noble metal catalysts are metal-carbides [1] metal-nitrides [2], spinel [3,4] and perovskite-type [5,6] metal oxides, metal-oxynitrides [7][8][9][10], metal-carbonitrides [11,12], metal-chalcogenides [13], conductive polymers [14], enzymatic compounds [15][16][17], and N 4 -chelate macrocyclic compounds [18][19][20]. However, the fundamental drawbacks of the proposed catalysts present challenges to their implementation as PEMFC catalysts.…”