The interface of metalorganic chemical vapor deposition-CdTe/HgCdTe

Nemirovsky, Y.; Amir, N.; Goren, D.; Asa, G.; Mainzer, N.; Weiss, Eliezer

doi:10.1007/bf02653069

Cited by 14 publications

(9 citation statements)

References 21 publications

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“…This will significantly affect the device performance. The issue of surface passivation has been addressed by several workers in the past [5][6][7][8][9][10]. The subject matter is however so important for the IR detector technology development that a large number of publications have appeared during the past several years and the purpose of this article is to give the present status of the technology and also to identify the problem areas.…”

Section: Introductionmentioning

confidence: 99%

Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors

Agnihotri

Musca

Faraone

1998

Semicond. Sci. Technol.

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Surface passivation has been recognized as a crucial step in the fabrication of mercury cadmium telluride photoconductive as well as photovoltaic detectors. The subject has attracted considerable attention in the past and several reviews existed by 1991. The subject matter, however, received added impetus with the development of techniques like MOCVD and MBE and recently there has been considerable work on MCT passivation using in situ grown II-VI semiconductors. In this report, we have tried to give the present status and identify the issues particularly with reference to the recent work on the subject.

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Section: Introductionmentioning

confidence: 99%

Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors

Agnihotri

Musca

Faraone

1998

Semicond. Sci. Technol.

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“…68,69 Therefore, an appropriate surface preparation procedure should have been used for such indirectly grown samples in order to improve the quality of the CdTe-HgCdTe interface. Nemirovsky et al 70,71 suggested using a UV photon-assisted hydrogen radical pretreatment in the case of MOCVD grown CdTe on (111)-oriented HgCdTe wafers. Accumulated surfaces were obtained by this procedure on p-type HgCdTe.…”

Section: Passivationmentioning

confidence: 99%

Thirty years of HgCdTe technology in Israel

Weiss

2009

SPIE Proceedings

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The study of HgCdTe technology in Israel began in the mid 1970's under the leadership of the late Prof. Kidron and his group at the Technion, Israel Institute of Technology. The R&D efforts were continued by other groups at the Technion and other universities and research institutes in Israel, as well as by SCD. Many aspects of the technology of this material were studied, including both bulk crystal and epitaxial growths and microelectronic fabrication methods, with an emphasis on surface treatment and passivation. Various characterization methods were developed to study both the basic and applied material and device properties. The efforts, reviewed in this article, matured at SCD as it commercialized the HgCdTe technology, launching large-volume production lines of state-of-the-art linear and multi-linear TDI LWIR detector arrays of various sizes from 10×1 to 480×6 elements. Over the years, SCD has supplied its customers with thousands of both photoconductive (PC) and photovoltaic (PV) detectors, which are briefly presented in the paper.

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“…The realization of heterostructures is feasible by the epitaxy techniques such as metal organic chemical vapor deposition (MOCVD) or MBE. 5,6 These techniques enable in-situ growth of high-quality heterostructures of CdTe on HgCdTe. Good performance of the photodiodes has been demonstrated, but the process of forming CdTe/HgCdTe interface and its direct effect in controlling the surface recombination have not been characterized.…”

Section: Introductionmentioning

confidence: 99%

Compositionally graded interface for passivation of HgCdTe photodiodes

Pal

Malik

Srivastav

et al. 2006

Journal of Elec Materi

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A compositionally graded CdTe-Hg 1Àx Cd x Te interface was created by deposition of CdTe on p-HgCdTe and subsequent annealing. The compositionally graded layer between CdTe and HgCdTe was formed by an interdiffusion process and was used for passivation. The composition gradient (Dx) in the interfacial region and the width of the graded region were tailored by adopting a suitable annealing procedure. The effect of process conditions on the interfacial profile and photoelectric properties such as lifetime and surface recombination velocity was studied in detail. Surface recombination velocity of the p-HgCdTe could be reduced to the level of 3,000 cm/s at 77 K, which represents very good passivation characteristics. The passivation layer formed by this method can be used for the fabrication of high performance and stable modern infrared detectors. Thus, a passivation process is developed, which is simple, effective, reproducible, and compatible with the HgCdTe device fabrication and packaging processes.

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The interface of metalorganic chemical vapor deposition-CdTe/HgCdTe

Cited by 14 publications

References 21 publications

Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors

Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors

Thirty years of HgCdTe technology in Israel

Compositionally graded interface for passivation of HgCdTe photodiodes

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