The integration of graphene into microelectronic devices

Ruhl, G.; Wittmann, Sigrid; Koenig, Matthias

doi:10.3762/bjnano.8.107

Cited by 39 publications

(26 citation statements)

References 61 publications

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“…It is a great material to produce heat-spreading solutions like heat sinks. Graphene is useful in microelectronics [14] and larger applications [15]. Graphene is additionally a very hopeful material to be utilized in batteries and supercapacitors with higher energy storage and faster charge [16][17][18].…”

Section: Preparation Of Graphenementioning

confidence: 99%

Review on the recent progress in the preparation and stability of graphene-based nanofluids

Mahian

Wongwises

et al. 2020

J Therm Anal Calorim

106

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Graphene has attracted much attention from the science world because of its mechanical, thermal, and physical properties. Graphene nanofluid is well known for its easy synthesis, longer suspension stability, higher heat conductivity, lower erosion, corrosion, larger surface area/volume ratio, and lower demand for pumping power. This article is an audit of experimental outcome about the preparation and stability of graphene-based nanofluids. Numerous researches to prepare and stabilize graphene-based nanofluids have been developed, and it is indispensable to create a complete list of the approaches. This research work outlines the advancement on preparation and assessment methods and the techniques to enhance the stability of graphene nanofluids and outlook prospects.

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Section: Preparation Of Graphenementioning

confidence: 99%

Review on the recent progress in the preparation and stability of graphene-based nanofluids

Mahian

Wongwises

et al. 2020

J Therm Anal Calorim

106

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“…Since the chemical potential µ is not component of the density of states g(E), Eq. (7) can be transformed to (8) This latter expression yields the sought formula of the diffusion coefficient:…”

Section: Resultsmentioning

confidence: 99%

“…We chose twisted graphene as the working layer for Co particle deposition since it is less affected by substrate as compared to single-layer graphene [31,33]. Furthermore as noted above the possibility of producing an Ohmic contact between a metal and two-layered graphene is usually higher than for single-layer graphene [2,3,7,8].…”

Section: Methodsmentioning

confidence: 99%

“…However one of the key problems to graphene use in electronics is the complexity of fabricating Ohmic contacts without damaging graphene crystal lattice. Experiments have shown that Ohmic contacts can be most easily formed on multilayered graphene [2,3,7,8]. Nevertheless the problem of fabricating high-quality electric contacts remains a problem of attention for fundamental and technical research thus intensifying the importance of understanding carrier transport mechanisms near and through metal/graphene contacts.…”

Section: Introductionmentioning

confidence: 99%

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Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

Fedotov¹,

Прищепа²,

Fedotov³

et al. 2019

MoEM

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Graphene applications in electronics require experimental study of the formation of high-quality Ohmic contacts and deeper understanding of electron transport mechanisms at metal/grapheme contacts. We have studied carrier transport in twisted CVD graphene decorated with electrodeposited Co particles forming Ohmic contacts with graphene layers. We have compared layer resistivity as a function of temperature and magnetic field R�(T, B) for as-synthesized and decorated twisted graphene on silicon oxide substrates. Experiments have proven the existence of negative (induction < 1 Tl) and positive (induction > 1 Tl) contributions to magnetoresistance in both specimen types. The R�(T, B) functions have been analyzed based on the theory of 2D quantum interference corrections to Drude conductivity taking into account competition of hopping conductivity mechanism. We show that for the experimental temperature range (2–300 K) and magnetic field range (up to 8 Tl), carrier transport description in test graphene requires taking into account at least three interference contributions to conductivity, i.e., from weak localization, intervalley scattering and pseudospin chirality, as well as graphene buckling induced by thermal fluctuations.

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“…In recent years has been widely recognized as a promising material for microelectronic devices and sensors due to the exceptional and unique properties gathered in the same material, as high electrical and thermal conductivity, thermal stability and excellent mechanical properties [2]. These characteristics make it one of the most promising nanomaterials in terms of integrated and miniaturized applications in microelectronics [3], optoelectronics [4], in the manufacture of transparent electrodes, storage, sensors of different types [5] [6] and also applications in large areas such as energy conversion, solar cells [7], plastics manufacturing or conductive ceramics [8]. One of the main applications reported in recent years with graphene-based electronic devices are electrochemical sensors, basically due to their high electron transport, good compatibility and flexibility [9].…”

Section: Introductionmentioning

confidence: 99%

Graphene Trails on PECVD Hydrogenated Amorphous Silicon Carbide Films SiC-a: H by Laser Writing at Room Temperature

Feria

Carreño

Rangel³

et al. 2020

JICS

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The production of high quality graphene without the need for catalyst metals as in the case of chemical vapor deposition (CVD) techniques remain a challenge. Silicon carbide is one of the materials with potential to form graphene films on its surface through thermal decomposition when subjected to high temperatures and ultrahigh vacuum. This technique is highly desirable since it enables the elimination of corrosion and transfer steps, which can leave residues in the graphene structure and alter its quality, as well as its electrical proprieties, however it is a costly and time consuming method. In this work, we present the production of graphene trails by direct laser radiation writing at room temperature and atmospheric pressure on hydrogenated amorphous silicon carbide films (SiC-a:H) produced by Plasma Enhanced Chemical Vapor Deposition (PECVD). Graphene trails of approximately 1cm x 4μm were obtained with patterns designed by computer Aided Design (CAD) software. Variations were made in both scanning speed and laser focal length, identifying a great dependence on the graphene quality with these two parameters. The best results of the Raman Spectroscopy Mappings showed high quality graphene with distance between point defects (LD) of 20nm, crystallite size (La) of 25nm and few layers (2-3). In addition, the electrical measurements from Au/Ti (20nm/100nm) electrodes deposited by electron beam evaporation showed high conductivity, with sheet resistances (Rs) from 0.7kΩ to 1.3 kΩ per square. This technique opens a great possibility of manufacturing devices for applications in electronics, being a fast, efficient and low cost method.

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The integration of graphene into microelectronic devices

Cited by 39 publications

References 61 publications

Review on the recent progress in the preparation and stability of graphene-based nanofluids

Review on the recent progress in the preparation and stability of graphene-based nanofluids

Effect of cobalt particle deposition on quantum corrections to Drude conductivity in twisted CVD graphene

Graphene Trails on PECVD Hydrogenated Amorphous Silicon Carbide Films SiC-a: H by Laser Writing at Room Temperature

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