The influences of preparation parameters on NiO thin film properties for gas-sensing application

Effect of oxygen partial pressure on the structural, optical and electrical properties of sputtered NiO films

“…Because of its interesting optical, electrical and magnetic properties, it has immense potential in a number of applications. NiO is a p-type semiconductor with a wide range of applications such as transparent conductive films [2], spin-valve giant magneto (GMR) sensor [3][4][5][6], gas sensors [7], chemical sensors [8], electrochromic display devices [9], etc. NiO has a rock salt crystalline structure and has a lattice parameter 0.4176 nm.…”

Cookie‐like Au/NiO Nanoparticles with Optical Gas‐Sensing Properties

“…Films of NiO, a p-type semiconductor with a band gap of 4.2 eV, have been proposed as a sensitive material for chemoresistive [8] or optical [9] gas sensors. The working mechanism of these materials lies in a change of the electrical resistance or optical transmittance of the material caused by variations in the free-electron density, which in turn result from physisorption, chemisorption, and catalytic reactions between the probed gas and the surface of the material.…”

Porous sol gel silica films doped with crystalline NiO nanoparticles for gas sensing applications

“…NiO is a p-type semiconductor with a wide band gap of 4.2 eV and studied for its interesting properties in gas sensing (CO, NO and H 2 ) [6,7] applications. NiO is known to reversibly change both its optical transmittance and electrical resistance while promoting red-ox reactions [1,8,9].…”