The influence of the ion implantation temperature and the flux on smart-cut© in GaAs

Webb, M.; Jeynes, C.; Gwilliam, R.; Tabatabaian, Z.; Royle, A.; Sealy, B.J.

doi:10.1016/j.nimb.2005.04.100

Cited by 14 publications

(15 citation statements)

References 6 publications

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“…At temperatures above 200°C, RBS/channeling data has not been measured because blistering begins to appear at the high temperature. However, it is reported that at the high temperature the lattice disorder is lower, suggesting that the evolution of these defects is less prolific because of a pronounced out-diffusion of hydrogen [12]. These phenomena are responsible for the existence of a implantation temperature window for the layer splitting of GaAs wafer by an ion-cut process.…”

Section: Resultsmentioning

confidence: 99%

“…To minimize channeling effects, implantation was performed under 7° sample tilt. In order to ignore the dependence of hydrogen flux on the ion-cut process [12], it was kept almost constant at about 1x10 13 H + /cm 2 /s. of ions in Matter) code.…”

Section: Methodsmentioning

confidence: 99%

“…Several attempts to transfer GaAs layers onto Si by layer splitting have been reported [9][10][11]. However, until now, there is no consensus as to the implantation temperatures required to split GaAs [12] most probably due to the inaccuracy in the measurement of wafer surface temperature.…”

Section: Introductionmentioning

confidence: 99%

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Hydrogen ion implantation mechanism in GaAs-on-insulator wafer formation by ion-cut process

Choi¹,

Kim²,

Kim³

et al. 2006

AIP Conference Proceedings

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Abstract-The GaAs-on-insulator (GOI) wafer fabric-ation technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the asimplanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in 120~160°C, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Hydrogen ion implantation mechanism in GaAs-on-insulator wafer formation by ion-cut process

Choi¹,

Kim²,

Kim³

et al. 2006

AIP Conference Proceedings

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“…Clearly, defect nucleation and growth are very crucial to realize the Smart-Cut process and have attracted considerable research attention [4][5][6][7][8][9][10][11][12][13][14][15]. The implanted hydrogen ions are trapped in the intrinsic vacancies in the silicon crystal structures and diffuse among these vacancies at high temperature.…”

Section: Fracture Mechanics Modelsmentioning

confidence: 99%

“…The external pressure and stress in general impede the nucleation and growth of defects, but their influence depends on the type of implanted ions [9]. Recently Webb et al [10] discovered that a high hydrogen flux can accelerate the defect evolution in the Smart-Cut process of GaAs. Hochbauer et al [11][12][13][14] systematically studied the distribution profiles of implanted hydrogen ions at different phases and considered the relationships among the peak induced damage zone, high hydrogen concentration zone and splitting position.…”

Section: Introductionmentioning

confidence: 99%

Fracture mechanics analysis on Smart-Cut® technology. Part 1: Effects of stiffening wafer and defect interaction

Liu

Mai

et al. 2008

Acta Mech Sin

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In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator (SOI) wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indicate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF's. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.

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Influence of implantation conditions of He⁺ ions on the structure of a damaged layer in GaAs(001)

Щербачев

Bailey

2011

Physica Status Solidi (a)

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Phone: þ7 499 638 44 45, Fax: þ7 495 236 05 12An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He þ ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles;(2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix.

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The influence of the ion implantation temperature and the flux on smart-cut© in GaAs

Cited by 14 publications

References 6 publications

Hydrogen ion implantation mechanism in GaAs-on-insulator wafer formation by ion-cut process

Hydrogen ion implantation mechanism in GaAs-on-insulator wafer formation by ion-cut process

Fracture mechanics analysis on Smart-Cut® technology. Part 1: Effects of stiffening wafer and defect interaction

Influence of implantation conditions of He⁺ ions on the structure of a damaged layer in GaAs(001)

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The influence of the ion implantation temperature and the flux on smart-cut© in GaAs

Cited by 14 publications

References 6 publications

Hydrogen ion implantation mechanism in GaAs-on-insulator wafer formation by ion-cut process

Hydrogen ion implantation mechanism in GaAs-on-insulator wafer formation by ion-cut process

Fracture mechanics analysis on Smart-Cut® technology. Part 1: Effects of stiffening wafer and defect interaction

Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

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Influence of implantation conditions of He⁺ ions on the structure of a damaged layer in GaAs(001)