2022
DOI: 10.1016/j.jece.2022.107656
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The influence of synthesis conditions on the visible-light triggered photocatalytic activity of g-C3N4/TiO2 composites used in AOPs

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Cited by 21 publications
(12 citation statements)
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“…The magnitude of the upward shift is higher for the m-gC 3 N 4 /TiO 2 -nt (red filled square) composites as a result of high interaction areas between the two materials. Although the upward shift is low for the composite b-gC 3 N 4 /TiO 2 -nt (black filled circle), the type of interaction is promotional (upward shift), suggesting that the formation of the composite between TiO 2 and g-C 3 N 4 is beneficial in enhanced photocatalytic activity as evidenced by the literature. The H 2 evolution rate of m-gC 3 N 4 /TiO 2 -nt ( x = 0.6) shows the highest value (∼65 μmol/h), which is about 3 times higher than that of the b-gC 3 N 4 /TiO 2 -nt ( x = 0.6) and about 6 times higher than that of pure TiO 2 -nt ( x = 0). The origin of the promotional effect of the interaction should be the separation of photoexcited charge carriers at the contact between g-C 3 N 4 and TiO 2 .…”
Section: Resultsmentioning
confidence: 81%
“…The magnitude of the upward shift is higher for the m-gC 3 N 4 /TiO 2 -nt (red filled square) composites as a result of high interaction areas between the two materials. Although the upward shift is low for the composite b-gC 3 N 4 /TiO 2 -nt (black filled circle), the type of interaction is promotional (upward shift), suggesting that the formation of the composite between TiO 2 and g-C 3 N 4 is beneficial in enhanced photocatalytic activity as evidenced by the literature. The H 2 evolution rate of m-gC 3 N 4 /TiO 2 -nt ( x = 0.6) shows the highest value (∼65 μmol/h), which is about 3 times higher than that of the b-gC 3 N 4 /TiO 2 -nt ( x = 0.6) and about 6 times higher than that of pure TiO 2 -nt ( x = 0). The origin of the promotional effect of the interaction should be the separation of photoexcited charge carriers at the contact between g-C 3 N 4 and TiO 2 .…”
Section: Resultsmentioning
confidence: 81%
“…On the other hand, the applicability of g-C 3 N 4 as a photocatalyst is limited owing to its low specific surface area and fast charge carrier recombination [1]. Roškarič et al [93] showed that simple mortar milling of previously prepared g-C 3 N 4 and TiO 2 can form a junction between the phases that enables the injection of visible-light-generated electrons from the conduction band of g-C 3 N 4 to the conduction band of TiO 2 , thus prolonging the lifetime of charge carriers. The charge carrier recombination rate of TiO 2 + g-C 3 N 4 was further reduced by annealing of the TiO 2 + g-C 3 N 4 composite at 350 °C, which owing to the relative thermal (in)stability of g-C 3 N 4 , increased the interface area between the components and thus enabled better injection of the visible-light-generated g-C 3 N 4 electrons.…”
Section: Semiconductor Couplingmentioning
confidence: 99%
“…Therefore, the main objective of the research work presented here was to optimize the parameters of the onestep g-C 3 N 4 synthesis procedure 5 using dicyandiamide to obtain g-C 3 N 4 with a higher specific surface area for enhanced photocatalytic reaction under visible-light and simulated sunlight illumination. To achieve this goal, we used the modified Simplex method to find the global maximum in only a few steps.…”
Section: Introductionmentioning
confidence: 99%