The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

Uchida, Kosuke; Hiyoshi, Toru; Nishiguchi, Taro; Yamamoto, Hirotsugu; Matsukawa, Shingo; Furumai, Masaki; Mikamura, Yasuki

doi:10.4028/www.scientific.net/msf.858.840

Cited by 14 publications

(13 citation statements)

References 4 publications

(4 reference statements)

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“…Figure 4 shows the electric field distributions of C-MOS and the proposed structure in the off state when the V DS is 650 V. According to research [ 23 ], the maximum oxide electric field ( E MOX ) to obtain a lifetime of more than 10 years was estimated to be 2.7 MV·cm −1 in blocking state. Because of the deep P+ shielding layer, both of the structures have a lower electric field than 2.7 MV·cm −1 at the gate oxide.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

et al. 2022

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In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and improves the performance in the third quadrant. CSLs with different doping concentrations help to lower the on-state resistance as well as the gate-drain capacitance. As a result, the on-state resistance is decreased by 47.82% while the breakdown voltage remains the same and the turn-on and turn-off losses of the proposed structure are reduced by 83.39% and 68.18% respectively, compared to the conventional structure.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

et al. 2022

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“…The influence of surface pit shape on 4H-SiC double implanted metal-oxide-semiconductor field-effect transistor (MOSFETs) reliability under a high temperature drain bias test has been investigated by Uchida. et al [9] in 2015, and the failure was revealed to be an oxide breakdown above the pit generated at the threading mixed dislocation in both pit shapes. Bonyadi.…”

Section: Introductionmentioning

confidence: 93%

Forward Voltage Drop Induced by an Abnormal Threading Dislocation Aggregation in 4H-SiC GTO Devices

Cui

Chen

et al. 2019

Materials

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An abnormal star-like defect was found on the failed SiC gate turn-off thyristor (GTO) devices after metal removal and KOH etching at 450 °C in this work. It is of extraordinary larger size of 210–580 µm, even much larger than the etch pit of a micropipe in 4H-SiC. In addition, the abnormal star-like defect, exhibiting the consistent orientation with the six-fold symmetry of silicon carbide, was found to consist of several penetrating dislocations with the help of a LEXT OLS4000 3D laser confocal microscope. These abnormal star-like etch pits can severely reduce the forward blocking characteristic of GTOs, while exerting insignificant influence on the forward current-voltage characteristics between anode and gate electrode of the 4H-SiC GTO devices. Interestingly, the relationship between forward voltage drop and dislocation density is affected by the abnormal star-like defect. A regular increase of forward voltage drop at 100 A/cm2 was observed with the increasing dislocation density, while this correlation disappears in the presence of an abnormal star-like defect.

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“…Too large of a gate oxide field extremely degrades the long-term reliability of the devices. It is found that under a high gate oxide electric field, hot carriers can be trapped in the gate oxide, leading to degraded device characteristics [20], and gate oxide breakdown easily happens with surface pit shape defects [21].…”

Section: Introductionmentioning

confidence: 99%

“…Too high of an electric field in the gate oxide of SiC power devices can reduce the lifetime of the devices. A high electric field in the gate oxide together with SiC surface defects easily lead to the breakdown of the gate oxide [21]. Under too high of a gate oxide electric field, hot carriers are prone to be trapped in the gate oxide, leading to the failure of power devices: for example, the threshold voltage shifting [20].…”

Section: Introductionmentioning

confidence: 99%

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

Zhang¹,

Li²,

Zheng³

et al. 2020

Energies

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A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement effect, which leads to a low on-state voltage (VON) approaching the SiC trench-gate IGBT. The strong injection enhancement effect is obtained by a heavily doped carrier storage layer (CSL), which creates a hole barrier under the p-body to hinder minority carriers from being extracted away through the p-body. A p-shield is located at the bottom of the CSL and coupled to the p-body of the IGBT by an embedded p-MOSFET (metal-oxide-semiconductor field effect transistors). In off-state, the heavily doped CSL is shielded by the p-MOSFET clamped p-shield. Thus, a high breakdown voltage is maintained. At the same time, owing to the planar-gate structure, the proposed IGBT does not suffer the high oxide field that threatens the long-term reliability of the trench-gate IGBT. The turn-off characteristics of the new IGBT are also studied, and the turn-off energy loss (EOFF) is similar to the conventional planar-gate IGBT. Therefore, the new IGBT achieves the benefits of both the conventional planar-gate IGBT and the trench-gate IGBT, i.e., a superior VON-EOFF trade-off and a low oxide field.

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The Influence of Surface Pit Shape on 4H-SiC MOSFETs Reliability under High Temperature Bias Tests

Cited by 14 publications

References 4 publications

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

Forward Voltage Drop Induced by an Abnormal Threading Dislocation Aggregation in 4H-SiC GTO Devices

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

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