The influence of deposition conditions and alloying on the electronic properties of amorphous selenium

Density of states in the mobility gap of stabilized a-Se from electron time-of-flight photocurrent analysis

“…These may be the states at E c À 1:0 eV uncovered by Abkowitz and Enck using xerographic measurements [18]. The exact nature of these states is still unknown but their sensitivity to doping and alloying is confirmed by numerous experiments [4,19]. They are believed to be thermodynamic defects [20].…”

Recent advances in X-ray photoconductors for direct conversion X-ray image detectors

“…The hole lifetime s h drops rapidly with decreasing substrate temperature whereas the electron lifetime s e is independent of the substrate temperature [8]. Increasing the As concentration increases the electron range, whereas Cl doping increases the hole range [9]. Table 1 lists typical electron and hole ranges for stabilized a-Se photoconductors.…”

Reduction of the dark current in stabilized a-Se based X-ray detectors

“…Normally Cl in the ppm range is doped into a-Se:0.5%As to compensate for As induced hole traps [9], but most of the layers in the present work were not doped a-Se n-type layer Na doped a-Se …”