The Impact of Solvents on the Performances of Solution‐Processed Indium Gallium Zinc Oxide Thin‐Film Transistors Using Nitrate Ligands

Abstract

Herein, solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistor (TFT) is fabricated utilizing metal nitrates as precursors, and the impact of nitrate ions in different solvents on the performances of IGZO TFT is demonstrated. During IGZO film fabrication, the nitrogen in nitrate species actually dopes into the film in the fashion of different chemical states depending on different solvents. When IGZO precursors dissolve in deionized water (DIW), due to the high polarity of the solvent, metal nitrates are completely dissociated, leading to the conversion of nitrates to nitrides in IGZO film. This nitrogen decreases the density of the interface trap states, thus improving the characteristics of the IGZO TFT. In contrast, when using 2‐methoxyethanol (2‐ME) as the solvent, nitrogen mainly forms nitrogen oxide and acts as a trap density that leads to the degradation of the device performances. By increasing the annealing temperature of IGZO film, nitrogen oxide can convert to metal nitride, resulting in enhanced device performance. The IGZO TFT fabricated using DIW as a solvent with 300 °C annealing temperature exhibits the saturation mobility of 2.5 cm2 V−1 s−1 and Ion/off ratio of >106.5. Herein, a step is made toward the solvent effect on the performance of solution‐processed oxide TFT.

Doping Indium Oxide Films with Amino‐Polymers of Varying Nitrogen Content Markedly Affects Charge Transport and Mechanical Flexibility

“…This also introduces slight differences in transistor performance for the pristine In 2 O 3 based devices used as controls (vide infra). [46] Moreover, since PVP-NH 2 is insoluble in the processing solvents that are compatible with the MO precursors (H 2 O, alcohols, etc. ), PVP-BOC was used as an in situ PVP-NH 2 precursor to fabricate In 2 O 3 :PVP-NH 2 blend films with, nominally, ≈0-2 wt% of PVP-NH 2 .…”

Recent progress in the development of backplane thin film transistors for information displays

“…Research on solution-based oxide TFTs has used diverse approaches and the results have improved very quickly ( Table 2). Achievements in solution-based oxide TFTs over the past decade can be summarized as follows: (1) low-temperature process technology by the synthesis of new precursors and the control of thermodynamic reaction [20][21][22][23][24][25][26][27]; (2) lowtemperature or high µ using various post-processing methods [28][29][30][31][32][33]; (3) high-performance implementation according to changes in material composition by using spin coating, spray pyrolysis, inkjet, slot-die coating, and e-jet [7,22,[34][35][36][37][38].…”

A chemically treated IGZO-based highly visible-blind UV phototransistor with suppression of the persistent photoconductivity effect

“…14 To address these limitations, previous research has focused on reducing metal nitrate ion residues by employing highly polar deionized water (DIW) as an alternative solvent. 15 The organic residues also impact the characteristics of phototransistors. Nevertheless, there has been limited research devoted to enhancing the performance of IGZO-based phototransistors by adjusting the quantity of organic residues through solvent engineering.…”