MRS Proc. 2000 DOI: 10.1557/proc-610-b6.13 View full text
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Konstantin V. Loiko, Giri Nallapati, Keith M. Jarreau, Shashank S. Ekbote, Roy A. Hensley, Dale Simpson, Thomas E. Harrington, William R. Frensley, Igor V. Peidous

Abstract: AbstractFactors responsible for the onset of dislocation generation in the fields of localized high stresses have been studied in LOCOS-isolated test structures by means of preferential etching, junction leakage analysis, and computer simulation. A strong correlation between densities of stacking faults and dislocations was observed in the experiments. Defect distributions also correlated to leakage currents. 2D simulations of stresses, interstitial injection, and stacking fault growth during field oxidation s…

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