The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Chen, Kainan; Zhao, Zhengming; Yuan, Liqiang; Lü, Tao; He, Fanbo

doi:10.1109/ted.2014.2362657

Cited by 123 publications

(39 citation statements)

References 19 publications

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“…From the input capacitance CISS, the output capacitance COSS and the reverse transfer capacitance CRSS can be found the gate-to-drain capacitance CGD=CRSS, the drain-tosource capacitance CDS=COSS-CRSS and the gate-to-source capacitance CGS= CISS-CRSS. In [28] are modelled the effect of the non-linear capacitances on the transient characteristics of the switching process. The effect of the nonlinearity of CGS can be neglected, therefore it is assumed constant [32].…”

Section: Improved Cds and Cgd Non-linear Modelmentioning

confidence: 99%

See 1 more Smart Citation

Analytical Model of Power MOSFET Switching Losses due to Parasitic Components

Locorotondo

Pugi

Corti

et al. 2019

2019 IEEE 5th International Forum on Research and Technology for Society and Industry (RTSI)

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In this paper the effect of parasitic elements on the MOSFETs switching transient through a linear and timevarying electrical model is presented. In particular, the effect of non-linear junction capacitances and the stray inductances have been studied and compared in terms of switching loss and waveform overshoot and ringing. The results obtained with the proposed model are validated by comparison between the model implemented in Matlab/Simulink and LTspice simulations. Considerations about the impact of stray inductances and switching energy losses are conducted and some observations to reduce energy losses are proposed.

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Section: Improved Cds and Cgd Non-linear Modelmentioning

confidence: 99%

“…In [28] the impact of nonlinear junction capacitance on switching transient and its modeling for Silicon Carbide (SiC) MOSFET is shown. Experiments show that without full consideration of nonlinear junction capacitances, some significant deviations between simulated and measured results will emerge in the switching waveforms.…”

Section: Introductionmentioning

confidence: 99%

Analytical Model of Power MOSFET Switching Losses due to Parasitic Components

Locorotondo

Pugi

Corti

et al. 2019

2019 IEEE 5th International Forum on Research and Technology for Society and Industry (RTSI)

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“…The capacitance CDS is a drain-source voltage VDS -sensitive parameter due to the variation in depletion region width of the drain-body junction with VDS, which is given by [20,21]:…”

Section: Temperature-based DV Ds /Dt Modelmentioning

confidence: 99%

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Liao

et al. 2017

Energies

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Due to our limited knowledge about silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dV DS /dt) for SiC MOSFET during turn-on and turn-off has been performed theoretically and experimentally in this paper. Turn-off variation in voltage is not a strong function of temperature, whereas the turn-on variation in voltage has a monotonic relationship with temperature. The temperature dependence is a result of the competing effects between the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in SiC MOSFETs. The relationship between variation in voltage and supply voltage, load current, and gate resistance are also discussed. A temperature-based analytical model of dV DS /dt for SiC MOSFETs was derived in terms of internal parasitic capacitances during the charging and discharging processes at the voltage fall period during turn-on, and the rise period during turn-off. The calculation results were close to the experimental measurements. These results provide a potential junction temperature estimation approach for SiC MOSFETs. In SiC MOSFET-based practical applications, if the turn on dV DS /dt is sensed, the device temperature can be estimated from the relationship curve of turn on dV DS /dt versus temperature drawn in advance.

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“…Obviously, C oss and C rss change with an applied voltage. According to [26], [32], and [33], the nonlinearity of the capacitance versus the voltage can be modelled as:…”

Section: A Extraction Of Key Parametersmentioning

confidence: 99%

“…However, the parasitic inductances and junction capacitances are not taken into consideration. In [32] and [33], it is shown that the nonlinear junction capacitances of power devices are critical for the switching transition. As a result they should be fully considered in the modeling and switching transient analysis, especially for high-frequency applications.…”

Section: Introductionmentioning

confidence: 99%

An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

Liang¹,

Zheng²,

Li³

2016

Journal of Power Electronics

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This paper derives an improved analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFETs. The proposed analytical model considers the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the trans-conductance. The turn-on process and the turn-off process are illustrated in detail, and equivalent circuits are derived and solved for each switching transition. The proposed analytical model is more accurate and matches better with experimental results than other analytical models. Note that switching losses calculated based on experiments are imprecise, because the energy of the junction capacitances is not properly disposed. Finally, the proposed analytical model is utilized to account for the effects of parasitic elements on the switching performance of a SiC MOSFET, and the circuit design rules for high frequency circuits are given.

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The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET

Cited by 123 publications

References 19 publications

Analytical Model of Power MOSFET Switching Losses due to Parasitic Components

Analytical Model of Power MOSFET Switching Losses due to Parasitic Components

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

An Improved Analytical Model for Predicting the Switching Performance of SiC MOSFETs

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