Thep-ZnO:N/i-Al2O3/n-GaN heterostructure—electron beam induced profiling, electrical properties and UV detectivity

Przeździecka, E.; Chusnutdinow, S.; Guziewicz, E.; Snigurenko, D.; Stachowicz, M.; Kopalko, K.; Reszka, A.; Kozanecki, A.

doi:10.1088/0022-3727/48/32/325105

Cited by 11 publications

(16 citation statements)

References 46 publications

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“…However, lead-free ZnO-based piezoelectric energy harvesters produce lower output voltages than lead zirconate titanate (PZT)-based harvesters, containing toxic piezoelectric materials [7]. Many research results have reported on various piezoelectric energy harvesters using polyethylene naphthalate (PEN), polyethylene terephthalate (PET), various metal wires, various flexible substrates, etc., in order to enhance the output voltages [8][9][10][11][12][13][14][15][16]. Also, various piezoelectric energy harvesters have been fabricated which exploit insulators to inhibit the so-called screening effect of free carriers, compensating for the positively polarized parts of ZnO, thus reducing the piezoelectric effect [7,8,11,13,14].…”

Section: Introductionmentioning

confidence: 99%

“…Many research results have reported on various piezoelectric energy harvesters using polyethylene naphthalate (PEN), polyethylene terephthalate (PET), various metal wires, various flexible substrates, etc., in order to enhance the output voltages [8][9][10][11][12][13][14][15][16]. Also, various piezoelectric energy harvesters have been fabricated which exploit insulators to inhibit the so-called screening effect of free carriers, compensating for the positively polarized parts of ZnO, thus reducing the piezoelectric effect [7,8,11,13,14]. To suppress the screening effect, wide-band-gap or p-type semiconductor materials have been combined with ZnO [7,8,11,12,[15][16][17].…”

Section: Introductionmentioning

confidence: 99%

“…Also, various piezoelectric energy harvesters have been fabricated which exploit insulators to inhibit the so-called screening effect of free carriers, compensating for the positively polarized parts of ZnO, thus reducing the piezoelectric effect [7,8,11,13,14]. To suppress the screening effect, wide-band-gap or p-type semiconductor materials have been combined with ZnO [7,8,11,12,[15][16][17]. Moreover, mathematical analysis and simulation studies have been theoretically performed to evaluate and interpret the piezoelectric characteristics or phenomenon of piezoelectric materials and devices [18,19].…”

Section: Introductionmentioning

confidence: 99%

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A Feasibility Study of Fabrication of Piezoelectric Energy Harvesters on Commercially Available Aluminum Foil

2019

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In this paper, we present zinc oxide (ZnO)-based flexible harvesting devices employing commercially available, cost-effective thin aluminum (Al) foils as substrates and conductive bottom electrodes. From the device fabrication point of view, Al-foils have a relatively high melting point, allowing for device processing and annealing treatments at elevated temperatures, which flexible plastic substrate materials cannot sustain because of their relatively low melting temperatures. Moreover, Al-foil is a highly cost-effective, commercially available material. In this work, we fabricated and characterized various kinds of multilayered thin-film energy harvesting devices, employing Al-foils in order to verify their device performance. The fabricated devices exhibited peak-to-peak output voltages ranging from 0.025 V to 0.140 V. These results suggest that it is feasible to employ Al-foils to fabricate energy-efficient energy harvesting devices at relatively high temperatures. It is anticipated that with further process optimization and device integration, device performance can be further improved.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Feasibility Study of Fabrication of Piezoelectric Energy Harvesters on Commercially Available Aluminum Foil

2019

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“…Therefore, to maximize the device output performance, it is essential to suppress the screening effect more effectively by controlling the ZnO free carrier density [15]. Some research teams have used insulators or other semiconductor materials to form a good potential barrier to increase output voltages [19]. Other research using AlN or various oxides (MoO x , Cu 2 O, and NiO) has been reported [14,16,18,20].…”

Section: Introductionmentioning

confidence: 99%

Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

2018

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Abstract:In this paper, we present a study of various ZnO/SiO 2 -stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO 2 /ZnO/SiO 2 micro-energy generators (SZS-MGs) and ZnO/SiO 2 /ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO 2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO 2 thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) magnetron sputtering technique. The effects of the thickness and/or position of the SiO 2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO 2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO 2 thin films in the ZnO/SiO 2 -stacked multilayer structures, in addition to the processing conditions.

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“…Moreover, there have been attempts to improve the piezoelectric materials or the device performance by adopting new electrodes or forming a p-n junction to block the screening effect based on energy band considerations [13][14][15]17]. Some research teams have used insulators or other semiconductor materials to form a good potential barrier to increase output voltages [16]. Other research using AlN or various oxides (MoOx, Cu2O, and NiO) has been reported [12,14,17,18].…”

Section: Introductionmentioning

confidence: 99%

Formation and characterization of various ZnO/SiO2-stacked layers for flexible micro-energy harvesting devices

Yoon¹,

Jeon²,

Yoon³

2018

Preprint

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In this paper, we present a study of various ZnO/SiO2-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO2/ZnO/SiO2 micro-energy generators (SZS-MGs) and ZnO/SiO2/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO2 and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO2 thin films were deposited on ITO-coated PEN substrates using an RF magnetron sputtering technique. The effects of the thickness and/or position of the SiO2 films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO2 thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO2 thin films in the ZnO/ SiO2-stacked multilayer structures, in addition to the processing conditions.

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Thep-ZnO:N/i-Al₂O₃/n-GaN heterostructure—electron beam induced profiling, electrical properties and UV detectivity

Cited by 11 publications

References 46 publications

A Feasibility Study of Fabrication of Piezoelectric Energy Harvesters on Commercially Available Aluminum Foil

A Feasibility Study of Fabrication of Piezoelectric Energy Harvesters on Commercially Available Aluminum Foil

Formation and Characterization of Various ZnO/SiO2-Stacked Layers for Flexible Micro-Energy Harvesting Devices

Formation and characterization of various ZnO/SiO2-stacked layers for flexible micro-energy harvesting devices

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