The hidden link between diffusion-induced recrystallization and ideal strength of metals

Schmitz, Guido; Baither, D.; Kasprzak, Michael; Kim, T.H.; Kruse, B.

doi:10.1016/j.scriptamat.2010.05.011

Cited by 24 publications

(20 citation statements)

References 14 publications

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“…It is rather difficult to distinguish DIR and DIGM experimentally (see, for example [24]). It is more and more widely accepted that in both processes the driving forces are related to stress accumulation and relaxation ahead/around the moving boundary [9,25]. In case of low temperature processes (when there is no bulk diffusion), it is most likely to suppose that the migrating GB driving force is originated by the diffusion induced GB stresses created by the differences of the GB atomic fluxes of the two components [26].…”

Section: Resultsmentioning

confidence: 99%

“…It is known that at low temperatures, where the bulk diffusion processes are practically frozen, even a complete intermixing of components in the thin film bilayer structures can happen by grain-boundary (GB) diffusion and GB migration through the film bulk [9,10]. The interdiffusion is often accompanied with the formation of the compound phases [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

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Low-Temperature Interdiffusion and Ordered Phase Formation in Au/Cu Nanocrystalline Thin Films at the Different Atmospheres

Tynkova¹,

Sidorenko²,

Kotenko³

et al. 2016

Metallofiz. Noveishie Tekhnol.

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Interdiffusion processes in the polycrystalline Au (30 nm)/Cu (40 nm) thin films during annealing at 100-200C for 15 and 30 min in a vacuum with different residual-atmosphere pressures of 10 2 and 10 6 Pa and in an environment of hydrogen at a pressure of 510 2 Pa are investigated. Secondary neutral mass spectrometry complemented with transmission electron microscopy, X-ray diffraction, and atomic force microscopy is used. The intermixing of two layers is observed at the temperatures, at which the bulk diffusion can be safely ruled out. Within the Au layer, the detected Cu profiles and their time evolution are typical C-kinetic regime grain boundary profiles. Due to the much higher grain boundary diffusivity, the saturation of Au grain boundaries at the Au-rich side is hit in a very short time. The high Cu concentration level in the Au-side could be interpreted by supposing existing boundaries, which are moving and leaving behind themselves the areas with high Cu concentration close to the stoichiometric compositions. Phase formation takes place in and around grain boundaries due to diffusing component transport along moving grain boundaries.Досліджено процеси взаємної дифузії в тонких полікристалічних плівках Au (30 нм)/Cu (40 нм) під час відпалу за температур у 100-200С впро-довж 15 і 30 хв. у вакуумі при різних тисках залишкової атмосфери у 10 2 і 10 6 Па та в середовищі водню при значенні тиску у 510 2 Па. Застосовано методу мас-спектрометрії вторинних нейтральних частинок, доповнену трансмісійною електронною мікроскопією, Рентґеновою дифракцією й атомно-силовою мікроскопією. Перемішування двох шарів спостерігало-ся при температурах, за яких повністю виключається дифузія за об'ємним механізмом. Одержані для шару Au профілі Cu та їх еволюція з часом були типовими профілями C-кінетичного режиму зерномежової Па. Использован метод масс-спектрометрии вторичных нейтральных ча-стиц, дополненный трансмиссионной электронной микроскопией, рент-геновской дифракцией и атомно-силовой микроскопией. Перемешивание двух слоёв наблюдалось при температурах, при которых объёмная диф-фузия полностью исключается. Измеряемые для слоя Au профили Cu и их развитие с течением времени были типичными профилями зерногранич-ной диффузии с кинетикой C-типа. Из-за гораздо более высокой зерногра-ничной диффузионной подвижности в обогащённом слое Au насыщение границ зёрен золота достигается за очень короткое время. Высокий уро-вень концентрации Cu в слое Au можно объяснить, предполагая наличие подвижных границ, которые оставляют позади себя области с высокой концентрацией Cu, близкой к стехиометрическому составу. Фазообразо-вание происходит внутри и вокруг границ зёрен посредством перемеще-ния диффундирующего компонента вдоль движущихся границ зёрен.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-Temperature Interdiffusion and Ordered Phase Formation in Au/Cu Nanocrystalline Thin Films at the Different Atmospheres

Tynkova¹,

Sidorenko²,

Kotenko³

et al. 2016

Metallofiz. Noveishie Tekhnol.

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“…It is known that in thin layered systems homogenization can occur even at low temperatures where the volume diffusion can be neglected [1][2][3][4]. During these processes the interdiffusion takes place along grain-boundaries, GBs.…”

Section: Introductionmentioning

confidence: 99%

Low temperature homogenization in nanocrystalline PdCu thin film system

Molnár

Katona

Langer

et al. 2015

Mater. Res. Express

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AbstactDiffusion and solid state reactions were investigated in Pd-Cu nanocrystalline films by means of secondary neutral mass spectrometry depth profiling technique. The heat treatments were made at low temperatures (where the volume diffusion was frozen in) for long enough annealing times to reach saturation. In the early stage there is a grain boundary interdiffusion. At longer times first a Pd plateau developed inside the Cu layer. Later on the Cu penetration was also more and more extended in the Pd, even the average composition of Cu in Pd became higher than the average Pd composition in Cu. Depending on the ratio of the initial thicknesses, the system (for thickness ratios corresponding to 50/50 Cu/Pd or to 75/25 Cu/Pd) arrived either at the mixture of pure Pd and β-CuPd phase or to the mixture of α′-Cu 3 Pd and β-CuPd phases, respectively, as dictated by the phase diagram. The process is interpreted as grain boundary diffusion induced solid state reaction.

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“…We have shown recently [1][2][3][4][5], that this process can be well characterized by a bimodal GB network with fast and slow diffusivities Furthermore, at low temperatures, during interdiffusion in binary systems where intermetallic layers can grow, it can be observed that the morphology of the formation and growth of the reaction product can be different from the usual picture observed at high temperatures, where the new 3 continuous phases form at the initial interface growing parallel to the initial contact surface. Indeed, it is known that at low temperatures, where bulk diffusion processes are practically frozen, even a complete intermixing of components in binary nanocrystalline couple can happen by grain boundary migrations through the volume [6,7,8]. The diffusion induced grain boundary motion, DIGM, and diffusion induced recrystallization, DIR, are the examples of such kind of GB motions.…”

Section: Introductionmentioning

confidence: 99%

“…During DIR new grains are formed with composition discontinuously different from the surrounding original grains, while in DIGM the composition of the zone left behind the sweeping boundary is also higher but has not such a well defined value. Although still there are discussions in the literature about the role of chemical driving forces [9], it is more and more widely accepted that in both processes the driving forces are related to stress accumulation and relaxation ahead/around the moving boundary [6,10,11].…”

Section: Introductionmentioning

confidence: 99%

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Beke

Langer

Molnár

et al. 2013

Philosophical Magazine

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Kinetic pathways of diffusion and solid state reactions in nanostructured thin film systemsMass transport and solid state reactions in nanocrystalline thin films is reviewed.It is illustrated that diffusion along different grain boundaries, GB, can have important effects on the overall intermixing process between two pure films.These processes can be well characterized by a bimodal GB network, with different (fast and slow) diffusivities. First the atoms migrate along fast GBs (triple junctions) and accumulate at the film surface. These accumulated atoms form a secondary diffusion source for back diffusion along slow boundaries.Thus the GBs of the thin films can be gradually filled up with the diffusing atoms and composition depth profiles reflect the result of these processes. Similar process can be observed in binary systems with intermetallic layers: instead of nucleation and growth of the reaction layer at the initial interface, the reaction takes place in the GBs and the amount of the product phase growths by the motion of its interfaces perpendicular to the GBs. Thus, the entire layer of the pure parent films can be consumed by this GB diffusion induced solid state reaction (GBDIREAC), and a fully homogeneous product layer can be obtained.

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The hidden link between diffusion-induced recrystallization and ideal strength of metals

Cited by 24 publications

References 14 publications

Low-Temperature Interdiffusion and Ordered Phase Formation in Au/Cu Nanocrystalline Thin Films at the Different Atmospheres

Low-Temperature Interdiffusion and Ordered Phase Formation in Au/Cu Nanocrystalline Thin Films at the Different Atmospheres

Low temperature homogenization in nanocrystalline PdCu thin film system

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

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