The growth of ultrathin Al2O3 films on Cu(1 1 1)

Jeliazova, Y.; Franchy, R.

doi:10.1016/s0169-4332(01)00773-5

Cited by 13 publications

(8 citation statements)

References 33 publications

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“…It has to be noted that ultrathin Al 2 O 3 film was grown on Cu(111) recently 12 by depositing Ni and Al on Cu(111), exposing it to oxygen at room temperature and annealing it in ultrahigh vacuum at 1200 K. The LEED pattern of the film was not analysed but it looks quite different from our result. Specifically, it looks rather similar to that of Al 2 O 3 film on NiAl(110).…”

Section: Structure Of the Well-ordered Aluminacontrasting

confidence: 84%

AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)

Yoshitake

Bera

Yamauchi

2003

Surface & Interface Analysis

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Section: Structure Of the Well-ordered Aluminacontrasting

confidence: 84%

AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)

Yoshitake

Bera

Yamauchi

2003

Surface & Interface Analysis

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“…32͒ and alumina/Cu͑111͒. 11 Alumina/FeAl͑110͒ displays almost the same LEED diagram as alumina/NiAl͑110͒. Its structure can thus be described by a quasirectangular unit cell, of size around 10.5ϫ 18 Å 2 , and with the pgg symmetry.…”

Section: The Numbers Nmentioning

confidence: 94%

“…The local hexagonal order in the layers generally gives rise to spots of high intensity in the diffrac-tion patterns. [11][12][13][14][15] The lattice constant associated to this short-range hexagonal organization ranges between 2.8 and 3.1 Å. The lowest values are generally found for thicker films and low annealing temperature T A .…”

Section: Introductionmentioning

confidence: 99%

Sixton rectangles in the structure of alumina ultrathin films on metals

et al. 2010

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In situ room temperature scanning tunneling microscopy ͑STM͒ observations combined with low energy electron diffraction and Auger electron spectroscopy were performed to investigate the structure of a thin aluminum oxide film grown on Ni͑111͒. Well-ordered alumina films were obtained after the deposition of 2.5 ML of aluminum on a clean Ni͑111͒ surface, followed by its oxidation under O 2 flow and subsequent annealing at 1000 K. Whereas an hexagonal unit cell corresponding to a ͑5 ͱ 3 ϫ 5 ͱ 3͒ reconstruction with respect to the Ni͑111͒ surface had been previously ascribed to this superstructure, our results indicate that the unit cell corresponds to a sixton rectangle, i.e., a rectangle with a ͱ 3 ratio between the lengths of the two sides of the mesh ͑18.2ϫ 10.5 Å 2 ͒. We attribute this specific ratio to the presence of the hexagonal arrangement of an oxygen plane in the layer. From the size and aspect ratio of the mesh and from the STM observations, we also conclude that the atomic organization observed for alumina/Ni͑111͒ is very similar to the organization observed for alumina grown on FeAl͑110͒, NiAl͑110͒, Cu-9 at. % Al͑111͒, and Cu͑111͒, which provides strong argument that this alumina structure is not specific of aluminum-based substrates but could be the equilibrium state of a two-layers-thick alumina film on a metal.

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“…[7] The preparation is based on two independent steps: deposition of NiAl in order to form a surface Ni-Al alloy and subsequent oxidation. Recently published work on creation of an alumina layer on a Ni(111) surface also used two steps involving Ni-Al alloy formation and oxidation.…”

Section: Introductionmentioning

confidence: 99%

Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study

Nemšák

Škála

Yoshitake

et al. 2010

Surface & Interface Analysis

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An epitaxial ultra-thin alumina layer was prepared on Ni(111) by simultaneous Al deposition and oxidation at elevated temperatures. Different deposition procedures lead to creation of oxide layers of various thicknesses and quality. Low-energy electron diffraction revealed epitaxial parameters of the films and the relationship between the nickel substrate and the oxide overlayer. Core-level photoelectron spectroscopy using Al-K α and synchrotron-generated photons show that the oxide-metal interface is formed by oxygen atoms, which is contrary to the case of epitaxial alumina layers prepared by the oxidation of NiAl(110) and Ni 3 Al(111) surfaces. The results of a photoelectric work function measurement are also discussed.

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The growth of ultrathin Al2O3 films on Cu(1 1 1)

Cited by 13 publications

References 33 publications

AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)

AES and LEED study of well‐ordered oxide film grown on Cu–9at.%Al(111)

Sixton rectangles in the structure of alumina ultrathin films on metals

Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study

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