The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA

Zhou, T. Q.; Radzimski, Z. J.; Rozgonyi, G. A.

doi:10.1557/proc-224-55

Cited by 5 publications

(1 citation statement)

References 6 publications

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“…If metals are dissolved from foreign particles, this increases melt impurity levels and leads to a higher level of decoration of structural defects at the interface, also increasing the recombination activity 48,[78][79][80] of those defects in the crystal. Foreign metal-rich particles incorporated directly into the material as inclusions affect only a small volume Figure 8.…”

Section: On the Size And Distribution Of Inclusionsmentioning

confidence: 99%

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Buonassisi

Istratov

Pickett

et al. 2006

Progress in Photovoltaics

174

106

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We present a comprehensive summary of our observations of metal-rich particles in multicrystalline silicon (mc-Si) solar cell materials from multiple vendors, including directionally-solidified ingot-grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal-rich particles are assessed by synchrotron-based analytical x-ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal-rich particles can be observed (metal silicide nanoprecipitates and metal-rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc-Si materials can largely be explained by variations in crystal

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Section: On the Size And Distribution Of Inclusionsmentioning

confidence: 99%

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Buonassisi

Istratov

Pickett

et al. 2006

Progress in Photovoltaics

174

106

View full text Add to dashboard Cite

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Recombination Activity of Misfit Dislocations in Silicon

Kittler¹,

Seifert²,

Higgs

1993

Phys. Stat. Sol. (a)

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A study of misfit dislocations in Si using the techniques of electron beam induced current (EBIC) and cathodoluminescence (CL) is presented. The dislocation recombination properties are found to depend on contamination. Dislocations in clean, as grown samples without D‐band luminescence have very low recombination activity, with an EBIC contrast c of about 0.3% at T = 80 K and without detectable contrast at 300 K. Ni contamination is shown to increase the dislocation contrast markedly and to lead to pronounced dark spots at 300 K. A negative c(T) slope is observed for dislocations, which is attributed to shallow centres. Another contrast mechanism acting at the dark spots is ascribed to charged Ni silicide particles. Dark CL dislocation contrast is observed at 5 K when using the substrate luminescence, caused by dislocation‐related reduction of exciton density. CL and EBIC correlate in a semi‐quantitative manner for all samples studied, suggesting that the same centres might be responsible for the CL and EBIC contrasts.

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Two classes of recombination behavior as studied by the technique of the electron beam induced current: NiSi2 particles and misfit dislocations in Ni contaminated n-type silicon

Kittler

Seifert

Radzimski

1993

Applied Physics Letters

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The recombination activity of well-defined NiSi2 precipitates and of misfit dislocations in Ni contaminated Si samples has been investigated using the technique of the electron-beam-induced current in dependence on sample temperature and beam current. Individual NiSi2 precipitates are found to show a high recombination activity, increasing slightly with temperature and decreasing with increasing beam current. On the other hand, misfit dislocations are nearly inactive at room temperature and increase their activity upon cooling the sample. The experimental findings are discussed in terms of recombination activity controlled by either defect charging or shallow centers.

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The Gettering and Electrical Activity of Ni, Au, and Cu in Epitaxial Si/Si(2%Ge)/Si during RTA

Cited by 5 publications

References 6 publications

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

Recombination Activity of Misfit Dislocations in Silicon

Two classes of recombination behavior as studied by the technique of the electron beam induced current: NiSi2 particles and misfit dislocations in Ni contaminated n-type silicon

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