The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport Mechanism

Abstract

Single crystals of normalGaP have been grown from the vapor phase in an open tube process on seeds of either normalGaP or normalGaAs . The reaction between H2O and a normalGaP source above 700°C in a stream of H2 provides the vapor phase species which react upon cooling to deposit normalGaP crystals. Epitaxial layers of normalGaP have been grown on substrates at temperatures as low as about 700°C, but the growth rates are extremely small. Substrate temperatures of about 1000°–1080°C and source temperatures of 1100°C generally were employed in this investigation to obtain reasonable growth rates for the production of large single crystals. Single crystals of normalGaAs and solid solutions of GaPxAs1−x also have been grown by this method. The growth conditions, crystal morphology, crystal properties, doping, and growth from the elements are discussed.

Analysis of performance-limiting defects in pn junction GaAs solar cells grown by water-mediated close-spaced vapor transport epitaxy

“…Close-spaced vapor transport (CSVT) is an alternative deposition technique using only solid precursors, which has been demonstrated for a number of semiconductor materials relevant to PV production [12][13][14][15][16][17]. CSVT can achieve growth rates up to ~1 µm/min [18], but with the potential for better material utilization than MOCVD or HVPE (approaching 100%) because the solid source is placed in close proximity to the substrate with growth rate and material losses determined by diffusion of the in situ generated gas-phase reactants.…”

Photoelectric Emission and Interband Transitions of GaP

“…12 a resistivity of 100 0 cm. It contained enough internal strain to prevent the exposure of a high-quality surface by cleavage.…”

Chemical Vapor Transport Reactions–Methods, Materials, Modeling

“…As far as the thermodynamic stability of the pnictides is concerned, phosphides and arsenides are similar as well. Consequently, the most important transport agent for the crystallization of the arsenides is iodine as well (183).…”

“…Finally, GaAs can be transported with a mixture of water and hydrogen. The mentioned transport agents are used especially in open systems with flowing gases [183].…”