The electrical resistivity of oxidized praseodymium thin films

Arakawa, Tsuyoshi; Kabumoto, Akira; Shiokawa, Jiro

doi:10.1016/0040-6090(84)90176-7

Cited by 3 publications

(1 citation statement)

References 6 publications

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“…Storage in dry air, after &I. GASCNIER several months did not affect the dc electrical properties. Arakawa et al [157,1581 have determined the electrical resistivity of Pro, thin films. They discussed their results as a function of the Pr/O ratio and therefore of the valence state of the cation, They concluded, from electrical resistivity and conductivity measurements and from oxygen pressure dependence, that Pro, thin films acted as a p-type semiconductor above 903 K (more abundant Pr3+ cations) and as a n-type semiconductor between 673 and 903 K (more abundant Pr4+ cations).…”

Section: Praseodymium Oxidesmentioning

confidence: 99%

Rare Earth Compounds (Oxides, Sulfides, Silicides, Boron, …) as Thin Films and Thin Crystals Physico-Chemical Properties and Applications

Gasgnier¹

1989

Phys. Stat. Sol. (a)

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Section: Praseodymium Oxidesmentioning

confidence: 99%

Rare Earth Compounds (Oxides, Sulfides, Silicides, Boron, …) as Thin Films and Thin Crystals Physico-Chemical Properties and Applications

Gasgnier¹

1989

Phys. Stat. Sol. (a)

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An MOCVD Approach to High‐k Praseodymium‐Based Films

Nigro

Malandrino

Toro

et al. 2006

Chemical Vapor Deposition

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New high-k dielectric thin films have become of increasing interest over the last few years in the search for an alternative material to SiO 2 gate insulators in MOS devices. Lanthanide oxides have been studied as potential candidates for SiO 2 replacement. In this review, a description of the different CVD approaches to fabricating praseodymium oxide and silicate films with dielectric properties is presented. In particular, thermally activated and liquid-injection metal-organic (MO) CVD as well as atomic layer deposition (ALD), developed in recent years, are discussed. Examples highlighting the importance of different praseodymium precursors on the deposited phases are given. Special emphasis is placed upon deposition parameters crucial to obtain Pr 2 O 3 films and upon interfacial characterization. In addition, dielectric properties have been correlated to structural and compositional characteristics of praseodymium-containing films.

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