The effects of post annealing on oxide-charge-to-breakdown and interface state in tungsten polycide gate

Abstract

The dependence of oxide chatge-to-breakdown (QBJ and device degradation on the combined post annealing of RTA and FA in the tungsten polycide gate technologv have been experimentally investigated. Based on the experimental results, QED and the degradation are improved on the lower temperature and the shorter time of RTA. Whereas E4RZ4 annealing sequence is more advantage to improve QED RI;I/FA annealing sequence is good for improving the device degradation.