The Effects of Chemical Etching of Porous Silicon on Raman Spectra

Ohmukai, Masato; Uehara, Nobutomo; Yamasaki, Tetsuya; Yasuo, Tsutsumi

doi:10.1023/b:cjop.0000038531.70434.dd

Cited by 10 publications

(5 citation statements)

References 11 publications

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“…The Raman spectrum for crystalline silicon consists of one sharp peak located at 520 cm −1 . On the other hand, the Raman spectrum of amorphous silicon reveals a broad peak at 480 cm −1 . Nanocrystalline silicon yields a Raman spectrum showing a broadened peak shifted below 520 cm −1 .…”

Section: Resultsmentioning

confidence: 97%

Converting Stöber Silica and Mediterranean Sand to High Surface Area Silicon by a Reaction under Autogenic Pressure at Elevated Temperatures

2009

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We report on a reaction to convert Stöber silica or Mediterranean sand to high surface area silicon (HSAS). The starting silica and/or the sand are reduced by magnesium under the autogenic pressure of the reactants at 750 °C for 5 h. After the MgO is removed, HSAS is formed. The surface areas are 200 and 86 m2/g for the product obtained from the Stöber silica and sand, respectively. The morphology of the final product is almost identical to that of the precursor silica. The products are stable in air because a thin layer of SiO2 is present on the surface of the silicon. We have detected luminescence from the HSAS in the wavelength region of 626−640 nm.

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Section: Resultsmentioning

confidence: 97%

Converting Stöber Silica and Mediterranean Sand to High Surface Area Silicon by a Reaction under Autogenic Pressure at Elevated Temperatures

2009

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“…Raman spectroscopy shows a broadening of the peak corresponding to Si-Si bonds due to the size decrease of small silicon crystals in the regions that constitute the filaments [17]. The deviation of the peaks and their asymmetry with respect to that in crystalline silicon are minimal (0.5%).…”

Section: Discussionmentioning

confidence: 97%

Formation and characterization of porous silicon films obtained by catalyzed vapor-chemical etching

Díaz-Torres

Romero-Paredes

Peña‐Sierra

et al. 2015

Materials Science in Semiconductor Processing

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“…29,32 A typical Raman spectrum for crystalline Si usually consists of a symmetric first order transverse optical phonon centred at y521 cm 21 . 33,34 As the grain size in micro-crystalline Si decreases, the Raman shift and peak width increases and the line-shape becomes asymmetric (which also occurs with doping changes, which is invariant in this case) with an extended tail at lower frequencies for quantum confinement or small size effects. In amorphous Si the Raman peak is broad and usually weak at 480 cm 21 .…”

Section: Raman Scattering Spectroscopy Of Porous Silicon Quantum Spon...mentioning

confidence: 91%

“…In amorphous Si the Raman peak is broad and usually weak at 480 cm 21 . 33,34 Here, micro-Raman scattering spectroscopy was conducted on samples 2E-100, 2E-60 and 2E-bulk Si (Fig. 9a) to examine the development and influence of porosity on the overall structure, specifically the presence and associated influence of nano-sized crystallites of silicon.…”

Section: Raman Scattering Spectroscopy Of Porous Silicon Quantum Spon...mentioning

confidence: 99%

Compositional characterisation of metallurgical grade silicon and porous silicon nanosponge particles

et al. 2013

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Porous silicon is generally achieved through electro-chemical etching or chemical etching of bulk silicon in hydrofluoric acid based solutions. The work presented here explores the effect of a chemical etching process on a metallurgical grade silicon powder. It is found that the metallurgical grade silicon particles contain surface bound impurities that induce a porous structure formation upon reaction with the chemical etchant applied. The correlation between the resultant porous structure formed due to the material composition is examined in detail. The elemental composition is determined using a combination of X-ray Photoelectron Spectroscopy and Time of Flight Secondary Ion Mass Spectroscopy. The porous structure is analysed using Transmission Electron Microscopy and Scanning Electron Microscopy. Three samples of the silicon particles analysed for this study include an un-etched bulk silicon powder sample and two samples of chemically etched powder. Pore formation within the particles is found to be dependent on the presence, dispersion, and local concentration of surface bound impurities within the starting powder.

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The Effects of Chemical Etching of Porous Silicon on Raman Spectra

Cited by 10 publications

References 11 publications

Converting Stöber Silica and Mediterranean Sand to High Surface Area Silicon by a Reaction under Autogenic Pressure at Elevated Temperatures

Converting Stöber Silica and Mediterranean Sand to High Surface Area Silicon by a Reaction under Autogenic Pressure at Elevated Temperatures

Formation and characterization of porous silicon films obtained by catalyzed vapor-chemical etching

Compositional characterisation of metallurgical grade silicon and porous silicon nanosponge particles

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