The effects of AlN on secondary recrystallization textures in cold rolled and annealed (001)[100] single crystals of 3% silicon iron

Taguchi, Satoru; Sakakura, Akira

doi:10.1016/0001-6160(66)90099-x

Cited by 62 publications

(12 citation statements)

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“…Therefore, the mechanism of AGG has been extensively studied in this alloy. It has been proposed, based on experiments, that this phenomenon arose from the grain boundary pinning by precipitates, [1][2][3] surface energy anisotropy and surface grooving, [4][5][6][7] recrystallization texture, 8,9) or grains with coincidence site lattice (CSL) orientations. [10][11][12] But the dominant mechanism is yet to be determined.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

Choi

Yoon

2003

ISIJ International

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Grain boundary shapes and grain growth in bulk 2.61 wt% silicon-iron have been studied by heat-treating at temperatures between 700 and 1 200°C. Initial microstructure with fairly uniform fine grains has been obtained by recrystallization at 800°C for 5 min after deformation. When subsequently heat-treated at 700 and 800°C, a fraction of the grain boundaries have hill-and-valley shapes with several facet planes or kinks. Some of these facet boundary segments are expected to be singular. Abnormal grain growth occurs at 700 and 800°C and is attributed to step growth of the boundaries. When heat-treated at 1 000°C, all grain boundaries are defaceted with smoothly curved shapes, indicating that they are atomically rough. At temperatures above 1 000°C, normal grain growth occurs, because the rough grain boundaries move continuously. This correlation between grain boundary structure and grain growth is consistent with the earlier observations in other metals and oxides. It is thus shown that the abnormal grain growth in this alloy occurs at low temperatures because of the singular grain boundary structure.KEY WORDS: silicon-iron; silicon-steel; abnormal grain growth; grain boundary faceting; singular grain boundary.ing along the grain boundaries using an image analysis program. For the specimens with fine grains, about 500-2 000 grains were measured, and for those with large grains, about 100-300 grains were measured. The grain boundary shapes were also examined in a transmission electron microscope (TEM). Results and DiscussionWet chemical analysis of the heat-treated bar showed that the Si content was 2.61 wt% and the major impurities were P (0.015 wt%), Ni (0.06 wt%), and Cr (0.01 wt%). The C, Mn, and S contents were about 0.005 wt%. The specimens heat-treated at 800°C for 5 min after compressing to 66.7 % in height had typical primary recrystallization structures with fine grains of 8.7 mm in average radius as shown in Fig. 1. The X-ray pole figure and electron back-scattered pattern (EBSP) analysis of these specimens did not show any macroscopic or microscopic texture. Figure 1 is the initial microstructure for all subsequent heat-treatments at various temperatures to observe the grain growth behavior.The grain growth during the heat-treatment at 600°C was very slow. After 250 h at 600°C, the grains were only slightly larger than those shown in Fig. 1. During the heattreatment at 700°C, typical AGG behavior was observed as shown in the microstructures of Fig. 2, and grain size distributions in Fig. 3. After 3 h, some large grains began to appear as shown in Fig. 2(a), and after 24 h, some grains had grown to about 700 mm radius as shown in Fig. 2(d). In Fig. 3, those large grains that could be clearly identified as the abnormal grains are marked by arrows. The fine matrix grains grew slowly as can be seen in Figs. 2 and 3.When the heat-treatment temperature was increased to 800°C, distinct AGG behavior was again observed during 24 h, but the number density of the abnormal grains was larger than that observed at ...

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Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

Choi

Yoon

2003

ISIJ International

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“…͑2͒ During secondary recrystallization annealing, this reaction is a trigger for the secondary recrystallization. 10 As the secondary recrystallization starts from 950°C ͑1223 K͒, 11 it could be presumed that the reaction shown in Eq. ͑2͒ starts from 950°C ͑1223 K͒.…”

Section: Discussionmentioning

confidence: 99%

Structure and formation process of the glass film on grain-oriented silicon steel using aluminum nitride as an inhibitor

Fujii

Yamazaki

Masui

et al. 1999

Journal of Applied Physics

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“…A type: fine needle-like precipitate B type: fine plate-like precipitate of irregular shape C type: larger agglomerate plate-like precipitate We could identify the particles of B type and C type as A1N by selected area electron diffraction but (1) . A type: fine needle-like precipitate B type: fine plate-like precipitate of irregular shape C type: larger agglomerate plate-like precipitate We could identify the particles of B type and C type as A1N by selected area electron diffraction but (1) .…”

Section: Methodsmentioning

confidence: 99%

A study on AlN in high permeability grain-oriented silicon steel

Sakai

Shiozaki

Takashina

1979

Journal of Applied Physics

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The effects of AlN on secondary recrystallization textures in cold rolled and annealed (001)[100] single crystals of 3% silicon iron

Cited by 62 publications

References 5 publications

Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

Temperature Dependence of Grain Boundary Structure and Grain Growth in Bulk Silicon-Iron.

Structure and formation process of the glass film on grain-oriented silicon steel using aluminum nitride as an inhibitor

A study on AlN in high permeability grain-oriented silicon steel

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