The Effect of Zn Concentration on the Optical Properties of Cd<sub>10–x</sub>Zn<sub>x</sub>S Films for Solar Cells Applications

Abstract

In this paper, Cd 10-x Zn x S (x = 0.1, 0.3, 0.5) films were deposited by using chemical spray pyrolysis technique, the molar concentration precursor solution was 0.15 M/L. Depositions were done at 350˚C on cleaned glass substrates. X-ray diffraction technique (XRD) studies for all the prepared film; all the films are crystalline with hexagonal structure .The optical properties of the prepared films were studied using measurements from VIS-UV-IR spectrophotometer at wavelength with the range 300-900 nm; the average transmission of the minimum doping ratio (Zn at 0.1%) was about 55% in the VIS region, it was decrease at the increasing of Zn concentration in the CdS films, The band gap of the doped CdS films was varied as 3.7, 3.8, 3.6 eV at x = 0.1, 0.3 and 0.5 respectively.

The Study of Optical Energy Gap, Refractive Index, and Dielectric Constant of Pure and Doped Polyaniline with HCl and H2SO4 Acids

“…Where R is the reflectivity and k = αλ/4π is the extinction coefficient. The extinction coefficient k describes the properties of the material with respect to light of a given wavelength and indicates the absorption changes when the electromagnetic wave propagates through the material (Al-Tememee et al, 2012). The values of reflective index n as a function of the wavelength of pure and doped PANI with HCl, and H 2 SO 4 is shown in Fig.…”

“…The increase in the reflective index may be attributed to higher packing density and change in crystalline structure also by increasing the C-H bonds (Nahida, and Marwa, 2011). Higher refractive index values are for better-structured films (Al-Tememee et al, 2012). The dielectric constant (ε) consists of a real part (ε r ) and an imaginary part (ε i ), which depend on the frequency of the electromagnetic wave.…”

Influence of the Reaction Temperature on Cd_1-xZn_xS Thin Films with Chemical Bath Deposited

“…Ⅱ-Ⅵ ternary compounds, especially Cd 1-x Zn x S as direct band gap of semiconductor materials, have the advantages of band-gap, low resistivity and easy ohmic contact and been widely used as window material in high-efficiency CIGS and GdTe thin films solar cells [1][2][3] . Cd 1-x Zn x S thin films can be achieved by different ways such as vacuum co-evaporation method [4] and chemical bath deposited (CBD) [5][6] .…”