The Effect of Plating Current Densities on Self-Annealing Behaviors of Electroplated Copper Films

Chang, Shih-Chieh; Shieh, Jia‐Min; Dai, Bau–Tong; Feng, Haidong; Li, Ying-Hao

doi:10.1149/1.1500348

Cited by 65 publications

(35 citation statements)

References 15 publications

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“…Oxidation on Cu RDL has been observed at some elapsed times using electrical current versus voltage measurement, and using analytical machines such as secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectra (XAES), and X-ray diffraction (XRD). These results provide local insight into surface reaction and resultant surface redistribution of impurities in electroplated Cu film, chemical state development on the surface of Cu RDL, as well as the evolution of previously reported microstructure [10,11].…”

Section: Introductionsupporting

confidence: 52%

Electrical Resistance Evolution of Cu Redistribution Layer Electroplated on a Si Interposer

Lee¹

2015

Int J Metall Mater Eng

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The changes in electrical and microstructural properties of electroplated Cu films on a Si-interposer substrate were investigated. When Cu films were exposed in an air environment after electroplating on SiO 2 /Si-substrate as a Si interposer, the resistance increased slightly until 7 days with a uniform distribution of it, and then increased very rapidly after 19 days with broader resistance distribution than those of the initial 7 days. It took 129 days to have much broader resistance distribution than that of 19 days. Secondary ion mass spectroscopy, X-ray photoelectron spectroscopy, and thin film X-ray diffraction demonstrated that the increase in electrical resistance of electroplated Cu films can be significantly influenced by the chlorine redistribution of impurity in electroplated Cu film to the surface of it, by the oxidation behavior on the surface of electroplated Cu film in an air environment, and the microstructural changes of electroplated Cu film with time, respectively. These phenomena can be explained by the ionic neutrality behavior due to the oxidation on the surface of electroplated Cu film and the microstructural changes with time at room temperature caused by recrystallization of electroplated Cu film. This study will be helpful in understanding the necessity of passivating or encapsulating the electroplated Cu film and will also give guidance to the 3-D integration of stacking many chips on a Si interposer.

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Section: Introductionsupporting

confidence: 52%

Electrical Resistance Evolution of Cu Redistribution Layer Electroplated on a Si Interposer

Lee¹

2015

Int J Metall Mater Eng

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“…2 shows the thickness and resistivity of electroplated Cu, which has its lowest resistivity below 2 at a current density of 15 . The increase of copper resistivity at lower or higher current density is due to the electroplating of impurities and large particles at low current density and the depletion of cupric ion adjacent to the cathode at high current density [13]. …”

Section: B Resistivity Measurement Of Electroplated Coppermentioning

confidence: 99%

Reduced-Loss Ink-Jet Printed Flexible CPW With Copper Coating

Hamilton

2013

IEEE Microw. Wireless Compon. Lett.

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“…[37][38][39] It is a measure of the deposition rate, in terms of the number of Cu ions reduced at the cathode per unit area per unit time. For Cu samples plated with the SPS + PEG + Cl À system, the voiding level decreased with increasing current density, 20 as shown in Fig.…”

Section: Effect Of Current Densitymentioning

confidence: 99%

Toward a Better Understanding of the Effect of Cu Electroplating Process Parameters on Cu3Sn Voiding

Yin

Wafula

Dimitrov

et al. 2011

Journal of Elec Materi

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Kirkendall voiding'' in the interfacial Cu 3 Sn intermetallic compound is often observed in solder joints made between Sn-containing alloys and Cu interconnect pads, during extended thermal aging or electromigration testing. It is commonly believed that voids arise from the Kirkendall effect, i.e., the imbalance of diffusion fluxes of Cu and Sn atoms in Cu 3 Sn. However, recent studies have demonstrated that the propensity for voiding is greatly affected by the amount of organic impurities incorporated during Cu electroplating. The level of impurities was shown to depend on various electroplating parameters, such as current density, bath temperature, bath age, etc. In this study, a general picture is proposed to provide a better understanding of the effect of electroplating process parameters on Cu 3 Sn voiding. The picture correlates the level of impurity incorporation to (1) the applied electroplating overpotential, and (2) the crystallographic orientation of the Cu deposit. As a first-order approximation, the picture is supported by a variety of electroplating experiments, secondary-ion mass spectroscopy (SIMS), and x-ray diffraction (XRD) analysis.

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The Effect of Plating Current Densities on Self-Annealing Behaviors of Electroplated Copper Films

Cited by 65 publications

References 15 publications

Electrical Resistance Evolution of Cu Redistribution Layer Electroplated on a Si Interposer

Electrical Resistance Evolution of Cu Redistribution Layer Electroplated on a Si Interposer

Reduced-Loss Ink-Jet Printed Flexible CPW With Copper Coating

Toward a Better Understanding of the Effect of Cu Electroplating Process Parameters on Cu3Sn Voiding

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