The effect of infrared plasmon on the performance of Si-based THz detectors

Zhu, He; Xu, Jintao; Zhu, Jiaqi; Wang, Miao; Wu, Huizhen; Li, Ning; Dai, Ning

doi:10.1007/s10854-016-5598-7

Cited by 14 publications

(12 citation statements)

References 26 publications

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“…GaAs基BIB探测器的发展比Ge基更落后: 在GaAs材料的生长过程中, 化学计量比的偏差会产生高浓度的本征缺陷, 极大地限制了 BIB探测器的性能; GaAs材料的自扩散十分严重, 极难在杂质浓度很高的吸收层上生长高纯度阻挡层 [18] . [5,[19][20][21][22][23][24][25] . 本文对这些研究进展进行了总结, 包括: Si基BIB红外探测器材料和器件的研究进展, 例如通过离子注入制备掩埋电极的方式成功研制了垂直结构的Si:P BIB探测器, 其截止波长在30 μm 以上 [19][20][21] ; 利用体等离激元效应改进了背入射式BIB 器件的结构设计, 提高了光电性能, 使探测器的黑体探测率在5 K时达到1.6×10 11 Jones [21] ; 从理论上对比研究分析了BIB红外探测器的常规工作模式(Conventional Operation Mode, COM)和反常工作模式(Alternate Operation Mode, AOM) [22] ; 表面等离激元(Surface Plasmon Polariton, SPP)耦合结构被分别引入到垂直结构和平面结构两种BIB红外探测器结构的设计和制备之中, 且实现了对探测器响应光谱的调制与性能的提升 [23,25] .…”

Section: 对于40 μM以上的红外频段 Si中没有合适的杂质unclassified

“…图片来自文献, 已获得授权 [20] . 图片来自文献, 已获得授权的方法测量得到, 具体结果如图12所示 [21,22,40] . 图 10 (网络版彩图)样品1-c,1-d和1-e的ECV数据 [20] .…”

Section: 界面对于杂质分布电活性的影响一直未被清晰地认unclassified

“…平面结构的BIB红外探测器如图13(a)所示 [41] . [21,40] . 图片来自文献, 已获得授权 Figure 12 (Color online) (a) SPR data of the epitaxial blocking layer, the active layer, and the buried bottom contact layer, where the buried bottom contact layer was developed using ion implantation; (b) concentration profile of impurity in devices along the growth direction obtained by SIMS where the buried bottom contact layer is thicker than that developed by ion implantation [21,40].…”

Section: 平面结构Si基bib红外探测器材料mentioning

confidence: 99%

“…暗电流比TSID低2个数量级, 这是因为器件的倒装结构使背入射式器件的实际工作温度比前入射式器件更低 [21] . 由图15(a)中电场分布可知, 吸收层与掩埋背电极层界面附近产生的电子可以获得更大的增益.…”

Section: 图15(a)为模拟得到的器件工作时阻挡层和吸收unclassified

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The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

Zhu

et al. 2021

Sci. Sin.-Phys. Mech. Astron.

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Section: 对于40 μM以上的红外频段 Si中没有合适的杂质unclassified

Section: 界面对于杂质分布电活性的影响一直未被清晰地认unclassified

Section: 平面结构Si基bib红外探测器材料mentioning

confidence: 99%

Section: 图15(a)为模拟得到的器件工作时阻挡层和吸收unclassified

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The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

Zhu

et al. 2021

Sci. Sin.-Phys. Mech. Astron.

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“…Although 80% of the active region was covered with a metal film in the surface-plasmon-enhanced device, its absolute photoresponse showed a 2.2-fold enhancement compared to the reference device at the resonance wavelength. [254][255][256] More exotic optoelectronics can be found in oxide-based neuromorphic transistors for neuromorphic computation. Such systems had been in the focus of researchers working together with Qing Wan from the Nanjing University.…”

Section: Optoelectronicsmentioning

confidence: 99%

Advances in Functional Nanomaterials Science

Rahimi‐Iman

2020

Annalen der Physik

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Technologies employing nanomaterials, such as electronics, optoelectronics, nanobiotechnologies, quantum optics, and nanophotonics, are perceived as the key drivers of investigations on novel and functional materials and their nanostructures for various applications. It is well understood that the study of such materials and structures has been of great importance for the optimization and development of electrical and optical devices. From such devices, one does not only expect higher efficiencies, but also access to the development of completely new concepts, which are strongly demanded by modern information‐processing, quantum, or medical technologies, and sensing applications. In this context, a wide range of aspects such as the physics of novel materials, as well as materials engineering, characterization, and applications are summarized here. Novel materials, which can be used, for instance, for energy harvesting or light generation, as well as for future logic devices; material engineering, which can lead to improved device functionality and performance in optoelectronics; material physics, the study of which allows insight to be gained into optical and electrical properties of nanostructured systems and quantum materials; and technologies/devices, addressing progress on the application side of sophisticated material systems and quantum structures, are highlighted using representative examples.

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Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

Hasan,

Khan,

Shahzadi

et al. 2024

Adv Funct Materials

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In recent years, silicon‐based room temperature Terahertz (THz) detectors have become the most optimistic research area because of their high speed, low cost, and unimpeded compatibility with mainstream complementary metal‐oxide‐semiconductor (CMOS) device technologies. However, Silicon (Si) suffers from low responsivity and high noise at THz frequencies. In this review, the recent advances in Si‐based THz detectors using silicon‐on‐insulator (SOI) substrates are presented. These offer several advantages over bulk counterparts, such as reduced parasitic capacitance, enhanced electric field confinement, and improved thermal isolation. The different types of THz detectors exploiting SOI substrate, such as conventional metal‐oxide‐semiconductor field effect transistors (MOSFETs), junction‐less MOSFETs, junction‐less nanowires field effect transistors (JLNWFETs), micro‐electromechanical system (MEMS), metal‐semiconductor‐metal (MSM) structures, and single electron transistor (SET), are discussed, and their key performances in terms of responsivity, noise equivalent power (NEP), bandwidth, and dynamic range are compared. The challenges and opportunities for further improvement of SOI THz detectors, such as device scaling, integration, and modulation, are also highlighted. This review may offer compelling evidence supporting the idea that SOI THz detectors have the potential to facilitate high performance, low power consumption, and scalability—qualities essential for advancing next‐level technologies.

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The effect of infrared plasmon on the performance of Si-based THz detectors

Cited by 14 publications

References 26 publications

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

Advances in Functional Nanomaterials Science

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates

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