The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

Baturay, Şilan; Ocak, Yusuf Selim; Kaya, Derya

doi:10.1016/j.jallcom.2015.04.212

Cited by 27 publications

(11 citation statements)

References 29 publications

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“…We have recently reported the experimental value of V OC as 260 mV after preparing several samples of n‐ZnO/p‐Si HJSC by depositing intrinsic ZnO on p‐Si wafers by RF magnetron sputtering . This value of V OC is very close to the recently reported values 292 mV and 257 mV but much lower than the values reported by other researchers earlier as 520 mV, 350 mV, 400 mV, and 330 mV proving discrepancies in V OC values of n‐ZnO/p‐Si HJSC stated in the literature.…”

Section: Introductionsupporting

confidence: 72%

“…They theoretically proposed that, alloying ZnO with magnesium (Mg), the conduction band of ZnO can be raised so that the effect of recombination centers at the interface can be strongly reduced enabling high efficiency despite recombination velocities as high as 10 6 cm/s. Baturay et al very recently reported deposition of intrinsic as well as gadolinium (Gd)‐doped ZnO films on p‐Si wafers to fabricate HJSC . It was concluded that the heterojunction formed with 1% Gd‐doped ZnO had the strongest rectification, highest barrier height, and the lowest series resistance.…”

Section: Introductionmentioning

confidence: 99%

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Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Hussain

2017

Progress in Photovoltaics

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Several research groups are currently working on n-ZnO/p-Si heterojunction solar cell, and recently, Pietruszka et al [Sol. Energ. Mat. Sol. Cells 147 (2016) 164-170] has reported the highest efficiency of 7.1% for this structure. The main challenge is to enhance the open circuit voltage up to theoretically predicted value of >0.6 V. This paper reports >20% improvement in open circuit voltage of n-ZnO/p-Si solar cell by depositing amorphous-ZnO at the interface at room temperature that possibly improves the passivation and/or avoids oxide formation at the interface during ZnO deposition. Two other materials, aluminum nitride and amorphous-Si, have also been used as buffer layers to evaluate their effect on suppression of interface states. Furthermore, additional advantage of ZnO as an antireflector has been experimentally verified for different thicknesses of ZnO film.

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Section: Introductionsupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Hussain

2017

Progress in Photovoltaics

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“…However, n-ZnO has been found to have applications in several optoelectronic devices, such as photovoltaic cells [1]. Since the proposed use of n-ZnO as an emitter layer and antireflection (AR) coating, several researchers have employed n-ZnO thin films to fabricate potentially high efficiency and low-cost solar cells [2][3][4]. Apart from several other properties which make ZnO a unique wide bandgap material, its bandgap and electron affinity can be tuned over a large range by doping or alloying.…”

Section: Introductionmentioning

confidence: 99%

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

et al. 2019

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For further uptake in the solar cell industry, n-ZnO/p-Si single heterojunction solar cell has attracted much attention of the research community in recent years. This paper reports the influence of bandgap and/or electron affinity tuning of zinc oxide on the performance of n-ZnO/p-Si single heterojunction photovoltaic cell using PC1D simulations. The simulation results reveal that the open circuit voltage and fill factor can be improved significantly by optimizing valence-band and conduction-band off-sets by engineering the bandgap and electron affinity of zinc oxide. An overall conversion efficiency of more than 20.3% can be achieved without additional cost or any change in device structure. It has been found that the improvement in efficiency is mainly due to reduction in conduction band offset that has a significant influence on minority carrier current.

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“…In order to affirm agreement of the value for by using (6), ( )on the right axis in Figure 6 Besides, the current study utilized Norde's method to compute the R value. The relationship based on Norde's method can be derived as [19,30] ( ) = − ln ( * 2 ) ,…”

Section: Resultsmentioning

confidence: 99%

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

Sittimart

Nopparuchikun

Promros

2017

Advances in Materials Science and Engineering

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In this study, n-type -FeSi 2 /p-type Si heterojunctions, inside which n-type -FeSi 2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560 ∘ C and Ar pressure of 2.66 × 10 −1 Pa. The heterojunctions were measured for forward and reverse dark current density-voltage curves as a function of temperature ranging from 300 down to 20 K for computation of heterojunction parameters using the thermionic emission (TE) theory and Cheung's and Norde's methods. Computation using the TE theory showed that the values of ideality factor ( ) were 1.71 at 300 K and 16.83 at 20 K, while the barrier height ( ) values were 0.59 eV at 300 K and 0.06 eV at 20 K. Both of the and values computed using the TE theory were in agreement with those computed using Cheung's and Norde's methods. The values of series resistance ( ) computed at 300 K and 20 K by Norde's method were 10.93 Ω and 0.15 MΩ, respectively, which agreed with the values found through computation by Cheung's method. The dramatic increment of value at low temperatures was likely attributable to the increment of value at low temperatures.

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The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

Cited by 27 publications

References 29 publications

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

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The effect of Gd doping on the electrical and photoelectrical properties of Gd:ZnO/p-Si heterojunctions

Cited by 27 publications

References 29 publications

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Electron Affinity and Bandgap Optimization of Zinc Oxide for Improved Performance of ZnO/Si Heterojunction Solar Cell Using PC1D Simulations

Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi2 Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering

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Computation of Heterojunction Parameters at Low Temperatures in Heterojunctions Comprised of n-Type β-FeSi₂ Thin Films and p-Type Si(111) Substrates Grown by Radio Frequency Magnetron Sputtering