The Effect of Electron Irradiation on Cesium Fluoride‐Free and Cesium Fluoride‐Treated Cu(In_1−x,Ga_x)Se₂ Solar Cells

Abstract

Herein, the effects of electron irradiation on cesium fluoride (CsF)‐free and CsF‐treated Cu(In1−x,Gax)Se2 (CIGS) solar cells with fluence from 1 × 1013 to 1 × 1017 cm−2 are investigated. Both CsF‐free and CsF‐treated CIGS solar cells exposed to fluence up to 3 × 1015 cm−2 show self‐healing properties, due to the soaking effect from electron bombardment. This feature indicates the robustness of CIGS solar cells for long‐term space explorations. On the other hand, electron irradiation with fluence above 1 × 1016 cm−2 suppresses the solar cell performance of both CsF‐free and CsF‐treated samples, which is expected to be due to the formation of irradiation‐induced defects on the CIGS thin film. This result suggests that the formation of irradiation‐induced defects is independent of the incorporation of heavier alkali metals into the CIGS thin films. The defect passivation and/or introduction rates at different fluences are investigated.

Proton Irradiation on Cesium‐Fluoride‐Free and Cesium‐Fluoride‐Treated Cu(In,Ga)Se2 Solar Cells and Annealing Effects under Illumination

“…[2] These highest power conversion efficiency and high radiation tolerance show good potential for space application. [3][4][5][6][7][8][9][10][11][12][13][14][15] Flight data demonstrate no degradation of Cu(In,Ga)Se 2 (CIGS) solar cell performance by proton irradiation and thermal annealing. [8] Kawakita et al suggested that CIGS thin-film solar cells do not degrade in space by proton from an application point of view owing to the moderate temperature (50 C) of solar paddles in geostationary orbit and minority carrier injection during regular operation.…”

The Degradation of Cu2ZnSn(S,Se)4 Kesterite Thin Film Solar Cells Induced by Proton Radiation

“…Therefore, the obvious degradation of V OC may be caused by the elements diffusion at p–n heterojuction interface and/or CZTSSe bulk region. [ 34 ] The J SC reduction could also arose from the performance changes of ITO transparent conductive layer, as described by XRD results. The remaining factor of V OC , J SC , FF, and PCE as a function of the displacement damage fluences in Figure 4e also shows that V OC is responsible for a greater contribution of the reduction in efficiency.…”

Elucidation of electrical properties of undoped and Sb-induced Cu2SnS3 (CTS) thin films and degradation properties on CTS thin films and solar cells by intentional proton irradiation

“…This helps analyze the number of defects and electrical properties of the CTS layer. The irradiation properties and degradation mechanisms of Si, 17,18) GaAs, 19,20) InP, 20,21) and CIGS [22][23][24][25][26][27] solar cells have been reported. Recently, the usage of nextgeneration solar cells, such as CZTS 28) and NiO, 29,30) has also been reported.…”