R. Pinachoa, M. Jaraíz, H. J. Gossmann, G. H. Gilmer, J. L. Benton, P. Werner
Abstract:AbstractA new model for carbon diffusion in silicon that explains carbon diffusion during annealing at 850°C and 900°C in superlattice carbon structures grown by MBE is implemented using the Monte Carlo atomistic simulator DADOS. Carbon concentrations in the delta layers are 2×1020 cm−3, exceeding by far the solid solubility. The simple kick-out mechanism which incorporates the well established values of the product of diffusivity and equilibrium concentrations of intrinsic point defects and in-diffusion exper…
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