The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors

Su, Wan-Ching; Chang, Ting‐Chang; Liao, Po‐Yung; Chen, Yu-Jia; Chen, Bo-Wei; Hsieh, Tien-Yu; Yang, Chao‐Yao; Huang, Yen-Yu; Chang, Hsi-Ming; Chiang, Shin‐Chuan; Chang, Kuan‐Chang; Tsai, Tsung‐Ming

doi:10.1063/1.4975206

Cited by 13 publications

(6 citation statements)

References 16 publications

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“…During NBIS, owing to the uplift of the energy band and the generation of electron-hole pairs under UV illumination, the holes inject into the defects through Fowler–Nordheim (FN) tunneling and thermal emission, causing a negative V TH shift. 32,33…”

Section: Resultsmentioning

confidence: 99%

Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

et al. 2022

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Section: Resultsmentioning

confidence: 99%

Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

et al. 2022

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“…Figure 2b schematically illustrates the device structure of the fabricated 1T1R single pixel. The IZO oxide TFT was designed as an inverted staggered structure [ 42 ] with an Al 2 O 3 gate insulator and a bottom‐gate electrode. A 5 nm thick HfO 2 layer was deposited simultaneously using the atomic layer deposition (ALD) process on top of both the IZO TFT back‐channel and the 25 nm Pt/3 nm Ti BE as a passivation layer and as an active medium of the memristor, respectively.…”

Section: Resultsmentioning

confidence: 99%

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

Lee

Baek

Lin

et al. 2020

Advanced Intelligent Systems

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Automated defect inspection technology has been widely investigated in a variety of fields, including the semiconductor and integrated circuit industry, [1-3] engineering and science, [4,5] and medical applications, [6,7] to overcome the drawbacks of manual detection methods, which are imprecise and timeconsuming. Various image processing approaches of defect identification such as filtering, structuring, and statistical methods have been recently developed to recognize the defective information from input images. [8-10] However, most defects are of irregular shape and size, while the inspection area is large, and thus the complexity of the input data for defect inspection is usually high. Therefore, high computational power along with large power consumption and long processing times is generally required to operate defect identification algorithms using the von Neumann architecture based computing system due to a memory wall problem between the microprocessor and storage memory. [11] To ameliorate these issues, here we have used a nonvolatile memory based neuromorphic computing system that imitates the human brain's operation combined with a software algorithm for the defect identification process. [12,13] Among them, memristor-based crossbar array based neuromorphic computing has received great attention due to its scalability and computing-in-memory features. [13-18] Cross-point structured memristors, nevertheless, have suffered from cell-to-cell interferences due to the sneak path currents through neighboring memristor pixels that lead to unnecessary power dissipation and inaccurate operations. [19] To precisely modulate the resistance of each memristor, the memristor-based array is usually integrated with a selector device (switching component) such as silicon (Si)-metal-oxide field-effect transistor (MOSFET), which is known as 1-transistor and 1-resistor (1T1R) structure. [20-23] The 1T1R architecture allows us to precisely program individual memristors using the

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“…In industry, the metal oxide composition material InGaZnO 4 (IGZO) was originally proposed for display applications . Due to its high transparency, uniformity, and mobility, IGZO has significant attention for various applications and their related TFT reliability issues . In addition, IGZO has a WBG characteristic of 3.1–3.4 eV, depending on the composition ratio .…”

Section: Comparisons Of the Features Of Many Other Uv Sensing Devicesmentioning

confidence: 99%

A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

Chen

Tsao

Chien

et al. 2019

Adv Materials Technologies

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produces some real risks, including wrinkles, pigmented flat spots known as liver spots, and even skin cancer. [1][2][3][4] These are mostly attributed to the effects of UV light, a shorter wavelength than the visual spectrum. Therefore, over the past decades, developments in UV sensors have received significant attention for their potential positive effects on human health.When considering the performance of many different UV sensors, required features include high sensitivity, stability, and linearity. Most importantly, a compact design compatible with current device fabrication process is key for low-cost production. [5,6] Previous studies mostly focused on a two terminal photodiode device based on wide bandgap (WBG) semiconductor materials such as TiO 2 , SiC, and ZnO materials. [7][8][9] Later, some III-V compounds, such as gallium nitride (GaN), also received attention as UV photodetector materials. [10,11] Some metal-semiconductor-metal (MSM) structures have also been proposed to simplify device fabrication processes. [7][8][9][10][11][12] Although such WBG-based UV sensors have the advantages of a simple structure and high intrinsic visible-blindness; numinous drawbacks such as poor crystal quality or high activation energy of dopants have slowed developments. In addition, UV-sensing devices have received significant recent attention for applications in areas such as human health, fire detection, and optical communication.One key factor for product commercialization is determining the optimal materials that allow for integration of excellent UV-sensing properties with compatibility with industrial fabrication processes. However, current UV sensors often fail to achieve this due to either mismatched materials or a device that must be excessively large in order to produce enough photocurrent for UV detection. The UV-light-sensing properties of an amorphous InGaZnO 4 (IGZO) thin-film transistor with a dual-gate structure and relatively small device size (width/length = 50 μm/10 μm) that achieves high sensitivity through a threshold-voltage-(V th )-adjustment method is proposed. Comparing the drain currents under UV exposure to those under darkened conditions indicates that the ratio between the photoinduced and dark current reaches 10 6 . Furthermore, the UV sensitivity of the dual-gate transistors can be adjusted by varying the bottom gate voltage, with each pixel of the sensor then being read out separately via scan line pulses. This allows the dual-gate a-IGZO transistor to be used for high-performance UV sensing while being effectively integrated in display applications. SensorsAlmost all living things on Earth rely on the sun for nutrition and survival, whether directly or indirectly. The sun provides radiant heat, and gives energy to plants for the photosynthesis process, thus providing basic needs and food for creatures and humans. However, exposure to the sun for human beings also

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The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors

Cited by 13 publications

References 16 publications

Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

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The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors

Cited by 13 publications

References 16 publications

Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Efficient Defect Identification via Oxide Memristive Crossbar Array Based Morphological Image Processing

A Dual‐Gate InGaZnO4‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection

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A Dual‐Gate InGaZnO₄‐Based Thin‐Film Transistor for High‐Sensitivity UV Detection