The Double Heterostructure: The Concept and its Applications in Physics, Electronics, and Technology (Nobel Lecture)

Photodetachment of H−near an interface

“…Therefore, environment such as potential walls or cavities can influence the photodetachment of ions and/or absorption spectra of atoms significantly. This phenomenon is quite similar to the case of atomic or ionic spontaneous emissions near an interface or in a cavity [21].…”

Photodetachment of H−near an interface

“…Therefore, environment such as potential walls or cavities can influence the photodetachment of ions and/or absorption spectra of atoms significantly. This phenomenon is quite similar to the case of atomic or ionic spontaneous emissions near an interface or in a cavity [21].…”

High Q-Factor and Low Threshold Electrically Pumped Single-Mode Microlaser Based on a Single-Microwire Double-Heterojunction Device

“…Recently, the construction of a p–n heterojunction with a combination of different semiconductors and carefully engineered band structures is considered to be an intelligent approach in promoting device performances by attaining charge redistribution and manipulation at the interfaces. Compared with single-component materials, such heterojunction provides unique physical, mechanical, and chemical properties due to charge interactions, crystal defects, and lattice strain created at interfacial junctions. , Generally, heterojunctions exhibit extremely high injection efficiencies. However, the electron and hole pairs injected into the depletion region at the required high concentrations for lasing often diffuse away, diminishing the available carriers for light emission into the cavity.…”

“…Compared with single-component materials, such heterojunction provides unique physical, mechanical, and chemical properties due to charge interactions, crystal defects, and lattice strain created at interfacial junctions. 49,50 Generally, heterojunctions exhibit extremely high injection efficiencies. However, the electron and hole pairs injected into the depletion region at the required high concentrations for lasing often diffuse away, diminishing the available carriers for light emission into the cavity.…”

Vertically Stacked MoSe2/MoO2 Nanolayered Photodetectors with Tunable Photoresponses

“…The electrons transfer continues until the Fermi levels of MoSe 2 and MoO 2 are aligned. Moreover, a layer called a double Helmholtz layer is established at the MoSe 2 /MoO 2 interface, where the holes for MoSe 2 and electrons for MoO 2 exist because of the electrostatic induction. , The energy band edges in MoSe 2 are continuously shifted between MoSe 2 and MoO 2 due to the electric field as a result of charge carriers transfer. The upward energy bands toward the interface due to the MoO 2 and Ti/Au work functions are greater than that of MoSe 2 .…”

Photodetachment of H−near an interface

“…Therefore, environment such as potential walls or cavities can influence the photodetachment of ions and/or absorption spectra of atoms significantly. This phenomenon is quite similar to the case of atomic or ionic spontaneous emissions near an interface or in a cavity [21].…”

High Q-Factor and Low Threshold Electrically Pumped Single-Mode Microlaser Based on a Single-Microwire Double-Heterojunction Device

“…Recently, the construction of a p–n heterojunction with a combination of different semiconductors and carefully engineered band structures is considered to be an intelligent approach in promoting device performances by attaining charge redistribution and manipulation at the interfaces. Compared with single-component materials, such heterojunction provides unique physical, mechanical, and chemical properties due to charge interactions, crystal defects, and lattice strain created at interfacial junctions. , Generally, heterojunctions exhibit extremely high injection efficiencies. However, the electron and hole pairs injected into the depletion region at the required high concentrations for lasing often diffuse away, diminishing the available carriers for light emission into the cavity.…”

“…Compared with single-component materials, such heterojunction provides unique physical, mechanical, and chemical properties due to charge interactions, crystal defects, and lattice strain created at interfacial junctions. 49,50 Generally, heterojunctions exhibit extremely high injection efficiencies. However, the electron and hole pairs injected into the depletion region at the required high concentrations for lasing often diffuse away, diminishing the available carriers for light emission into the cavity.…”

Vertically Stacked MoSe2/MoO2 Nanolayered Photodetectors with Tunable Photoresponses

“…The electrons transfer continues until the Fermi levels of MoSe 2 and MoO 2 are aligned. Moreover, a layer called a double Helmholtz layer is established at the MoSe 2 /MoO 2 interface, where the holes for MoSe 2 and electrons for MoO 2 exist because of the electrostatic induction. , The energy band edges in MoSe 2 are continuously shifted between MoSe 2 and MoO 2 due to the electric field as a result of charge carriers transfer. The upward energy bands toward the interface due to the MoO 2 and Ti/Au work functions are greater than that of MoSe 2 .…”

Photodetachment of H−near an interface

“…Therefore, environment such as potential walls or cavities can influence the photodetachment of ions and/or absorption spectra of atoms significantly. This phenomenon is quite similar to the case of atomic or ionic spontaneous emissions near an interface or in a cavity [21].…”

High Q-Factor and Low Threshold Electrically Pumped Single-Mode Microlaser Based on a Single-Microwire Double-Heterojunction Device

“…Recently, the construction of a p–n heterojunction with a combination of different semiconductors and carefully engineered band structures is considered to be an intelligent approach in promoting device performances by attaining charge redistribution and manipulation at the interfaces. Compared with single-component materials, such heterojunction provides unique physical, mechanical, and chemical properties due to charge interactions, crystal defects, and lattice strain created at interfacial junctions. , Generally, heterojunctions exhibit extremely high injection efficiencies. However, the electron and hole pairs injected into the depletion region at the required high concentrations for lasing often diffuse away, diminishing the available carriers for light emission into the cavity.…”

“…Compared with single-component materials, such heterojunction provides unique physical, mechanical, and chemical properties due to charge interactions, crystal defects, and lattice strain created at interfacial junctions. 49,50 Generally, heterojunctions exhibit extremely high injection efficiencies. However, the electron and hole pairs injected into the depletion region at the required high concentrations for lasing often diffuse away, diminishing the available carriers for light emission into the cavity.…”

Vertically Stacked MoSe2/MoO2 Nanolayered Photodetectors with Tunable Photoresponses

“…The electrons transfer continues until the Fermi levels of MoSe 2 and MoO 2 are aligned. Moreover, a layer called a double Helmholtz layer is established at the MoSe 2 /MoO 2 interface, where the holes for MoSe 2 and electrons for MoO 2 exist because of the electrostatic induction. , The energy band edges in MoSe 2 are continuously shifted between MoSe 2 and MoO 2 due to the electric field as a result of charge carriers transfer. The upward energy bands toward the interface due to the MoO 2 and Ti/Au work functions are greater than that of MoSe 2 .…”