The Dependence of Graphene Raman D-band on Carrier Density

Liu, Junku; Li, Qunqing; Zou, Yuan; Qian, Qingkai; Jin, Yuanhao; Li, Guanhong; Jiang, Kaili; Fan, Shoushan

doi:10.1021/nl4035048

Cited by 175 publications

(154 citation statements)

References 41 publications

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“…[23] and red squares from Ref. [24]) reasonably agree with each other. However, the Raman intensity of the iTA + iTO and G * bands dramatically increase at certain values of E F as shown in Figs.…”

Section: B Second-order Raman Spectrasupporting

confidence: 68%

Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect

et al. 2016

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Intensities of the first-and the second-order Raman spectra are calculated as a function of the Fermi energy. We show that the Kohn anomaly effect, i.e., phonon frequency renormalization, in the first-order Raman spectra originates from the phonon renormalization by the interband electron-hole excitation, whereas in the second-order Raman spectra, a competition between the interband and intraband electron-hole excitations takes place. By this calculation, we confirm the presence of different dispersive behaviors of the Raman peak frequency as a function of the Fermi energy for the first-and the second-order Raman spectra, as observed in some previous experiments. Moreover, the calculated results of the Raman intensity sensitively depend on the Fermi energy for both the first-and the second-order Raman spectra, indicating the presence of the quantum interference effect. The electron-phonon matrix element plays an important role in the intensity increase (decrease) of the combination (overtone) phonon modes as a function of the Fermi energy.

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Section: B Second-order Raman Spectrasupporting

confidence: 68%

Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect

et al. 2016

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“…The effects of doping have been reviewed in 2007 [137] and in 2015 [160]. We report that changing the carrier density also affects the D band spectroscopic parameters [170].…”

Section: Graphenementioning

confidence: 93%

“…The effects of doping have been reviewed in 2007 [137] and in 2015 [160]. We report that changing the carrier density also affects the D band spectroscopic parameters [170]. Impurities adsorbed on graphene can also modify carrier mobility and thus the Raman spectrum of graphene [171], changing the D band intensity.…”

Section: Graphenementioning

confidence: 93%

A Guide to and Review of the Use of Multiwavelength Raman Spectroscopy for Characterizing Defective Aromatic Carbon Solids: from Graphene to Amorphous Carbons

2017

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sp 2 hybridized carbons constitute a broad class of solid phases composed primarily of elemental carbon and can be either synthetic or naturally occurring. Some examples are graphite, chars, soot, graphene, carbon nanotubes, pyrolytic carbon, and diamond-like carbon. They vary from highly ordered to completely disordered solids and detailed knowledge of their internal structure and composition is of utmost importance for the scientific and engineering communities working with these materials. Multiwavelength Raman spectroscopy has proven to be a very powerful and non-destructive tool for the characterization of carbons containing both aromatic domains and defects and has been widely used since the 1980s. Depending on the material studied, some specific spectroscopic parameters (e.g., band position, full width at half maximum, relative intensity ratio between two bands) are used to characterize defects. This paper is addressed first to (but not limited to) the newcomer in the field, who needs to be guided due to the vast literature on the subject, in order to understand the physics at play when dealing with Raman spectroscopy of graphene-based solids. We also give historical aspects on the development of the Raman spectroscopy technique and on its application to sp 2 hybridized carbons, which are generally not presented in the literature. We review the way Raman spectroscopy is used for sp 2 based carbon samples containing defects. As graphene is the building block for all these materials, we try to bridge these two worlds by also reviewing the use of Raman spectroscopy in the characterization of graphene and nanographenes (e.g., nanotubes, nanoribbons, nanocones, bombarded graphene). Counterintuitively, because of the Dirac cones in the electronic structure of graphene, Raman spectra are driven by electronic properties: Phonons and electrons being coupled by the double resonance mechanism. This justifies the use of multiwavelength Raman spectroscopy to better characterize these materials. We conclude with the possible influence of both phonon confinement and curvature of aromatic planes on the shape of Raman spectra, and discuss samples to be studied in the future with some complementary technique (e.g., high resolution transmission electron microscopy) in order to disentangle the influence of structure and defects.

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“…features of indirect to direct bandgap transitions as the materials are thinned down to few-layers. [11][12][13][14][15] However, even though devices based on monolayer TMDCs have shown high on/off ratios and photosensitivities, [16][17][18][19] their carrier mobilities are still much lower than graphene. [20,21] This motivates ongoing searches for other 2D materials with unusual properties including black phosphorene and group-IV chalcogenides MX (M = Ge, Sn; X = S, Se) monolayers.…”

mentioning

confidence: 99%

Band Structure and Photoelectric Characterization of GeSe Monolayers

Zhao

Mao

et al. 2017

Adv Funct Materials

140

123

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Germanium selenide monolayer is promising in photoelectric applications for its natural p-type semiconductor and complicated band structures. Basic experimental investigations of few-to-monolayer germanium selenide are still absent; major scientific challenge is to develop of techniques for controllably thinned monolayers. In this study laser thinned monolayer germanium selenide on SiO 2 /Si substrates is demonstrated. A broad photoluminescence spectrum with eight continues peaks is observed from visible to infrared wavebands centered at ≈589, 655, 737, 830, 1034, 1178, 1314, and 1456 nm, respectively. First-principle calculations based on density functional theory illuminate the band structures of few-to-monolayer germanium selenide. Photoluminescence investigation combined with first-principle calculations indicates that the indirect to direct bandgap transition happens at few layers of N = 3. Current-voltage and photoresponse characteristics of monolayer based devices show 3.3 times the photosensitivity and much faster falling edges compared with those of the pristine nanosheet based devices. The present results provide useful insight into deep understanding of thickness dependent performances of germanium selenide monocrystalline.

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The Dependence of Graphene Raman D-band on Carrier Density

Cited by 175 publications

References 41 publications

Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect

Fermi energy dependence of first- and second-order Raman spectra in graphene: Kohn anomaly and quantum interference effect

A Guide to and Review of the Use of Multiwavelength Raman Spectroscopy for Characterizing Defective Aromatic Carbon Solids: from Graphene to Amorphous Carbons

Band Structure and Photoelectric Characterization of GeSe Monolayers

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