The Crystal Structure of SiAs.

Wadsten, T.; Burmester, S.; Cederberg, G.; Jensen, R. B.; Pederson, C. Th; Larsen, Erik

doi:10.3891/acta.chem.scand.19-1232

Cited by 69 publications

(41 citation statements)

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“…Mixed tetrahedral coordination is also exhibited by 1:1 combinations of elements from the Groups IV and V such as SiAs (Wadsten, 1965) and SiP (Wadsten, 1975). The building units of these layer compounds are As 6 or P6 octahedra surrounding two Si atoms.…”

Section: Structural Relationshipsmentioning

confidence: 99%

The structure of pentaindium tetrasulfide

Wadsten¹,

Arnberg²,

Berg³

1980

Acta Crystallogr Sect B

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Section: Structural Relationshipsmentioning

confidence: 99%

The structure of pentaindium tetrasulfide

Wadsten¹,

Arnberg²,

Berg³

1980

Acta Crystallogr Sect B

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“…Binary compounds of 1 Celine.Barreteau@unige.ch a group IV element (Si, Ge, Sn) and a group V pnictogens (P, As,) are also known to form layered structures in which 2D strongly covalent layers are stacked onto each other through weak van der Waals like bonds, as well as in TMDs. Silicon and germanium phosphides and arsenides have been reported since decades to crystallize in various layered structures with either orthorhombic (Cmc2 1 space group, SiP [11], Pbam space group, SiP 2 and GeAs 2 [12]) or monoclinic (C2/m space group, GeP, GeAs and SiAs [12,13,14]) symmetries. After the initial investigations of their crystal structures and phase equilibria, during the sixties and seventies, this family of compounds has been rather overlooked, and attracts today our interest as being a potential class of 2D materials, alternative to TMDs.…”

Section: Introductionmentioning

confidence: 99%

High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

Barreteau

Michon

Besnard

et al. 2016

Journal of Crystal Growth

141

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Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I 2 as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5 K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hopping conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications.

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“…For As n V clusters, the local structural parameters obtained from geometry optimization calculations were used in modeling of the EXAFS functions that were used in the least squares fits. For the monoclinic-SiAs, EXAFS modeling the structural parameters from literature was used [28] and for the substitutional-As form, EXAFS model was calculated with arsenic core atom replacing one of the Si atom in a silicon crystal. Figure 9.7 shows the FT data of the EXAFS function for the laser annealed samples measured above critical angle and the corresponding EXAFS fits except for the as-implanted sample, which exhibits no long range order beyond the first shell as expected for a high dose amorphizing implant.…”

Section: Electrical Data and Exafs Resultsmentioning

confidence: 99%

Characterization of Local Structures in Plasma Deposited Semiconductors by X-ray Absorption Spectroscopy

Sahiner

2014

Complex Plasmas

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Extended X-ray-Absorption Fine-Structure Spectroscopy (EXAFS) has been used to investigate the subtle local structural variations in plasma deposited semiconductors. Grazing incidence geometry EXAFS is a very effective tool to study the surface layers. Since EXAFS is an element specific sensitive local structural probe, it is advantageous to commonly used structural characterization techniques where there is no long-range crystalline order in material. EXAFS can provide crucial information deposition or post-deposition induced crystallographic structural modifications. The information extracted from EXAFS can be used as an important feedback for the thin film growth mechanisms. In this chapter the fundamental principles of EXAFS will be introduced. The data reduction and analyses with the structural model calculations will be discussed. The application of the EXAFS in plasma deposited silicon wafers and plasma-plume deposited high-k dielectric thin films will be presented.

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The Crystal Structure of SiAs.

Cited by 69 publications

References 0 publications

The structure of pentaindium tetrasulfide

The structure of pentaindium tetrasulfide

High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

Characterization of Local Structures in Plasma Deposited Semiconductors by X-ray Absorption Spectroscopy

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