The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022)

Seo, Haengha; Yeu, In Won; Kwon, Dae Seon; Kim, Dong‐Gun; Lim, Junil; Kim, Tae Kyun; Paik, Heewon; Choi, Jung‐Hae; Hwang, Cheol Seong

doi:10.1002/aelm.202270030

Adv Elect Materials

2022

DOI: 10.1002/aelm.202270030

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The Contrasting Impacts of the Al₂O₃ and Y₂O₃ Insertion Layers on the Crystallization of ZrO₂ Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022)

Haengha Seo¹,

In Won Yeu²,

Dae Seon Kwon³

et al.

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The Contrasting Impacts of the Al₂O₃ and Y₂O₃ Insertion Layers on the Crystallization of ZrO₂ Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022)

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