The configuration and diffusion of isolated oxygen in silicon and germanium

Corbett, J. W.; McDonald, Robert; Watkins, G. D.

doi:10.1016/0022-3697(64)90100-3

Cited by 240 publications

(74 citation statements)

References 8 publications

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“…During subsequent heat treatments oxygen atoms become mobile at temperatures .350 ± C and begin to cluster. Individual oxygen atoms occupying interstitial bond center positions (O i ) are known to diffuse by hopping between the neighboring bond center sites with an activation energy of 2.54 eV in a large temperature range of 300-1200 ± C [1,2]. However, aggregation of oxygen takes place at a much lower activation energy of about 1.8 eV [3] and oxygen-containing fast diffusing species are needed to explain the aggregation [4,5].…”

Section: Vibrations Of the Interstitial Oxygen Pairs In Siliconmentioning

confidence: 99%

Vibrations of the Interstitial Oxygen Pairs in Silicon

Pesola

Boehm²,

Nieminen

1999

Phys. Rev. Lett.

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Section: Vibrations Of the Interstitial Oxygen Pairs In Siliconmentioning

confidence: 99%

Vibrations of the Interstitial Oxygen Pairs in Silicon

Pesola

Boehm²,

Nieminen

1999

Phys. Rev. Lett.

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“…2 The interstitial oxygen atoms (O i ) diffuse by hopping between neighboring bond-center sites with an activation energy of 2.5 eV in a wide range of temperatures 300-1200°C. 2,3 Clustering of oxygen occurring under the heat treatments during manufacturing processes is a natural consequence due to the supersaturation of oxygen. Quartz precipitates have been observed at high temperatures (Ͼ800°C).…”

Section: Introductionmentioning

confidence: 99%

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

et al. 2002

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Migration, restructuring, and dissociation energies of oxygen complexes in silicon are studied theoretically through density-functional total-energy calculations. We find that the stablest oxygen complexes are straight chains that also have the lowest migration energies. The calculated migration energies decrease from 2.3 eV for an interstitial oxygen atom (O i ) to low values of 0.4 -1.6 eV for O 2 -O 9 chains and 1.9-2.2 eV for longer chains. The oxygen chains ͑which are thermal double donors͒ are expected to grow so that the migrating oxygen chains capture less-mobile but abundant O i 's: O n ϩO i →O nϩ1 . Restructuring energies of chains with a side O i into straight oxygen chains are 1.9-2.5 eV. Restructuring gives an essential contribution to the fast diffusion. We find that the shorter O 2 -O 9 chains dissociate primarily by ejecting one of the outermost oxygen atoms.

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“…(Si-H BC -Si bond) or oxygen 39 (slightly puckered Si-O BCSi bond), but rather to its geometrical position in the lattice. This position would be the same for instance for Ni atoms disturbing covalent Si-Si bonds in an ideal BC position, or for Ni atoms located in the center of a divacancy.…”

mentioning

confidence: 99%

Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling

Silva

Wahl

Correia

et al. 2014

Journal of Applied Physics

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We have studied the lattice location of implanted nickel in silicon, for different doping types (n, n + and p + ). By means of on-line emission channeling, 65 Ni was identified on three different sites of the diamond lattice: ideal substitutional sites, displaced bond-center towards substitutional sites (near-BC) and displaced tetrahedral interstitial towards anti-bonding sites (near-T). We suggest that the large majority of the observed lattice sites are not related to the isolated form of Ni but rather to its trapping into vacancy-related defects produced during the implantation. While near-BC sites are prominent after annealing up to 300-500• C, near-T sites are preferred after 500-600• C anneals. Long-range diffusion starts at 600-700• C. We show evidence of Ni diffusion towards the surface and its further trapping on near-T sites at the R p /2 region, providing a clear picture of the microscopic mechanism of Ni gettering by vacancy-type defects. The high thermal stability of near-BC sites in n + -type Si, and its importance for the understanding of P-diffusion gettering are also discussed.

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The configuration and diffusion of isolated oxygen in silicon and germanium

Cited by 240 publications

References 8 publications

Vibrations of the Interstitial Oxygen Pairs in Silicon

Vibrations of the Interstitial Oxygen Pairs in Silicon

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

Lattice location and thermal stability of implanted nickel in silicon studied by on-line emission channeling

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