Abstract:In this paper the change in on resistance found in GaN HEMTs is discussed. This test was composed to ensure we have a consistent R DS(ON) . The interest exists to determine if the efficiency drops due to conduction losses and ensure the longevity of the part [1]. The EPCs 2015 HEMTs were tested in a buck converting configuration under a 10A load. R DS(ON) of MOSFETs directly impact converter efficiency. GaN MOSFETs have a characteristic called dynamicR DS(ON) . Prolonged use of previous generations GaN FETs r… Show more
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