The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

Güler, G.; Karataş, Şükrü; Güllü, Ömer; Bakkaloğlu, Ö.F.

doi:10.1016/j.jallcom.2009.06.163

Cited by 22 publications

(21 citation statements)

References 37 publications

(101 reference statements)

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“…5) and statistical analysis yielded a mean BH value of 0.401 eV with a standard deviation of 0.015 eV. Due to the different nature of the measurement techniques, BHs deduced from I-V and C −2 -V are not always the same [31]. Although, in general, BHs from C-V measurements are higher than BHs from I-V measurements, in our study, we obtained I-V BHs that were higher than C-V BHs.…”

Section: Resultsmentioning

confidence: 99%

“…The BHs become smaller as the ideality factors increases. Güler et al [31] also mentioned that higher ideality factors among identically prepared diodes were often found to accompany lower observed BHs. This may be attributed to lateral barrier inhomogeneities in SDs [1,25,30,41,42].…”

Section: Resultsmentioning

confidence: 99%

“…Although studies have been performed to investigate the relationship between the effective BHs and the ideality factors of metal/Si diodes [2,17,31], and the reactions of germanium (Ge) with nickel (Ni) [32][33][34][35][36][37][38], nothing has yet been reported on the relationship between effective BHs and ideality factors from forward bias currentvoltage (I-V ) and reverse bias capacitance-voltage (C-V ) characteristics of Ni/Ge Schottky diodes. In most previous studies of Ni/Ge, interest has been focused on the formation and the morphology evolution of Ni on n-Ge under rapid thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

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Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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“…Although studies have been performed to investigate the relationship between the effective BHs and ideality factors of the metal/Si Schottky diodes [5,[18][19][20][21], nothing much has been reported on the relationship between effective BHs and ideality factors from forward bias I-V and reverse bias C-V characteristics of the metals/Ge Schottky diodes. Due to shrinking of the advanced Sibased complementary metal-oxide-semiconductor (CMOS) device feature size, it is becoming increasingly difficult to further improve Si-based CMOS performance with traditional device scaling, and new materials and device structures to relax the physical limitation in device scaling are now required.…”

Section: Introductionmentioning

confidence: 99%

“…The homogeneous BH value for the Pd Schottky contacts was obtained from the linear relationship between the experimental effective BHs and ideality factors. The essence of this homogeneous BH is that, it depicts the real meaningful value characteristic of the MS systems [19], which should be used to develop theories of physical mechanisms determining these BHs of Schottky contacts [29].…”

Section: Introductionmentioning

confidence: 99%

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

Chawanda¹,

Roro²,

Auret³

et al. 2010

Materials Science in Semiconductor Processing

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a b s t r a c tWe have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2.5 Â 10 15 cm À 3 . The Pd Schottky contacts were fabricated by vacuum resistive evaporation. The electrical analysis of the contacts was investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements at a temperature of 296 K. The effective barrier heights from I-V characteristics varied from 0.492 to 0.550 eV, the ideality factor n varied from 1.140 to 1.950, and from reverse bias capacitance-voltage (C À 2 -V) characteristics the barrier height varied from 0.427 to 0.509 eV. The lateral homogenous barrier height value of 0.558 eV for the contacts was obtained from the linear relationship between experimental barrier heights and ideality factors. Furthermore the experimental barrier height distribution obtained from I-V and (C À 2 À V) characteristics were fitted by Gaussian distribution function, and their mean values were found to be 0.529 and 0.463 eV, respectively.

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I–V–T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights

Pakma

Tozlu

Kavasoğlu

et al. 2010

J Sol-Gel Sci Technol

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The analysis of lateral distribution of barrier height in identically prepared Co/n-Si Schottky diodes

Cited by 22 publications

References 37 publications

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

I–V–T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights

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