Thallium Chalcohalides for X-ray and γ-ray Detection

Abstract

We report that the chalcohalide compound Tl(6)SeI(4) is a promising material for efficient X-ray and γ-ray detection. This material has a higher figure of merit than the current state-of-the-art material for room-temperature operation, Cd(0.9)Zn(0.1)Te (CZT). We have synthesized high-quality single-crystalline wafers of Tl(6)SeI(4) with detector-grade resistivities and good carrier transport of both electrons and holes. We demonstrate that pulse height spectra recorded using Co-57 radiation show an energy resolution matching that of a commercial CZT detector material.

TlHgInS3: An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

“…35 Because of these issues, new superior detector grade materials are in demand. 17,28,36 In search for new materials which may replace the current detector materials, compounds containing Tl and Hg are particularly attractive because the two elements are strong γ-ray absorbers which enables the effective detection using smaller crystals of material, thus relaxing the (µτ) requirements. 37 From a chemical point of view, Tl is often considered as a pseudo alkali metal because of the preferred +1 oxidation state and similar ionic radius to K + /Rb + ,.…”

Synthesis, crystal structure and optical property of a novel metal chalcohalide: ZnHg3Se2Cl4

“…New crystalline chalcohalides and chalcogenides have received extensive research interests [1- 6] not only because of their diverse structures but also technologically promising properties such as thermoelectric, phase-change transitions, upconversion luminescence, nonlinear optics, magnetism, and x-ray or γ-ray detections [7][8][9][10][11][12][13][14][15].…”

Параметрический резонанс и фотогальванические токи в слоистом кристалле TlGaSe-=SUB=-2-=/SUB=-

“…Представители семейства тройных халькогенидных соединений A III B III C IV 2 -слоистые монокристаллы сегнетоэлектрика-полупроводника TlGaSe 2 -привлека-ют внимание исследователей рядом уникальных свойств, интересных в связи с практическим применением [1]. Согласно данным [2,3], ширина запрещенной зоны этих кристаллов, определяемая при 300 K, варьируется в пре-делах 1.83−2.13 eV для прямых оптических переходов и 2.00−2.23 eV для непрямых оптических переходов.…”