Textile Resistance Switching Memory for Fabric Electronics

Abstract

A new type of wearable electronic device, called a textile memory, is reported. This is created by combining the unique properties of Al‐coated threads with a native layer of Al2O3 as a resistance switching layer, and carbon fiber as the counter‐electrode, which induces a fluent redox reaction at the interface under a small electrical bias (typically 2–3 V). These two materials can be embroidered into an existing cloth or woven into a novel cloth. The electrical resistance of the contacts is repeatedly switched by the bias polarity, as observed in the recently highlighted resistance switching memory. The devices with different structure from the solid metal‐insulator‐metal devices show reliable resistance switching behaviors in textile form by single stitch and in array as well that would render this new type of material system applicable to a broad range of emerging wearable devices. Such behavior cannot be achieved in other material choices, revealing the uniqueness of this material system.

Recent Progress of Textile‐Based Wearable Electronics: A Comprehensive Review of Materials, Devices, and Applications

“…The textile RRAM devices operated at voltages between −4 and +4 V with average on/off ratio of ≈10 2 . Furthermore, the textile RRAM devices were stably operated at room temperature up to 10 000 s. It was also demonstrated that the textile RRAM devices were reliable even after soaking in water with detergent for 10 min . In terms of mechanical stability, the textile RRAM devices showed stable operation in bent and twisted conditions (Figure e,f).…”

Recent Progress of Textile‐Based Wearable Electronics: A Comprehensive Review of Materials, Devices, and Applications

“…The textile RRAM devices operated at voltages between −4 and +4 V with average on/off ratio of ≈10 2 . Furthermore, the textile RRAM devices were stably operated at room temperature up to 10 000 s. It was also demonstrated that the textile RRAM devices were reliable even after soaking in water with detergent for 10 min . In terms of mechanical stability, the textile RRAM devices showed stable operation in bent and twisted conditions (Figure e,f).…”

Laser-Induced Graphene Composites as Multifunctional Surfaces

“…Size-independent switching characteristics of the memory devices suggest that the resistive switching can be induced by a local conducting path (Figure S25). − …”

Low energy consumption fiber-type memristor array with integrated sensing-memory

“…In a previous work, it has been verified that woven devices can work reliably even though the interfaces between the two fibers are not completely adhered. 33 The wearable electronic textiles are subjected to extensive mechanical stress and deformation, which might induce the separation or the shift of contact position between threads. With respect to the mechanism of the typical Ag-based (Ag electrode as the active electrode) two-terminal memristor, Ag filament-mechanism is relatively common.…”

Recent Progress of Textile‐Based Wearable Electronics: A Comprehensive Review of Materials, Devices, and Applications

“…The textile RRAM devices operated at voltages between −4 and +4 V with average on/off ratio of ≈10 2 . Furthermore, the textile RRAM devices were stably operated at room temperature up to 10 000 s. It was also demonstrated that the textile RRAM devices were reliable even after soaking in water with detergent for 10 min . In terms of mechanical stability, the textile RRAM devices showed stable operation in bent and twisted conditions (Figure e,f).…”

Laser-Induced Graphene Composites as Multifunctional Surfaces

“…Size-independent switching characteristics of the memory devices suggest that the resistive switching can be induced by a local conducting path (Figure S25). − …”

Low energy consumption fiber-type memristor array with integrated sensing-memory

“…In a previous work, it has been verified that woven devices can work reliably even though the interfaces between the two fibers are not completely adhered. 33 The wearable electronic textiles are subjected to extensive mechanical stress and deformation, which might induce the separation or the shift of contact position between threads. With respect to the mechanism of the typical Ag-based (Ag electrode as the active electrode) two-terminal memristor, Ag filament-mechanism is relatively common.…”

Recent Progress of Textile‐Based Wearable Electronics: A Comprehensive Review of Materials, Devices, and Applications

“…The textile RRAM devices operated at voltages between −4 and +4 V with average on/off ratio of ≈10 2 . Furthermore, the textile RRAM devices were stably operated at room temperature up to 10 000 s. It was also demonstrated that the textile RRAM devices were reliable even after soaking in water with detergent for 10 min . In terms of mechanical stability, the textile RRAM devices showed stable operation in bent and twisted conditions (Figure e,f).…”

Laser-Induced Graphene Composites as Multifunctional Surfaces

“…Size-independent switching characteristics of the memory devices suggest that the resistive switching can be induced by a local conducting path (Figure S25). − …”

Low energy consumption fiber-type memristor array with integrated sensing-memory

“…In a previous work, it has been verified that woven devices can work reliably even though the interfaces between the two fibers are not completely adhered. 33 The wearable electronic textiles are subjected to extensive mechanical stress and deformation, which might induce the separation or the shift of contact position between threads. With respect to the mechanism of the typical Ag-based (Ag electrode as the active electrode) two-terminal memristor, Ag filament-mechanism is relatively common.…”