Tentative analysis of Swirl defects in silicon crystals

Fan, T. W.; Qian, Jiajun; Wu, Jun; Lin, Longyong; Yuan, Jun

doi:10.1016/s0022-0248(00)00350-x

Cited by 13 publications

(4 citation statements)

References 7 publications

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“…As the analysis of wafers has not revealed any traces of mechanical damages of a surface, existence of stacking faults can be explained exclusively with the presence of swirl defects. According to one of the existing models [11,12], complexes of point defects and background impurity lead to formation of swirl defects. Therefore, the cluster of background impurity, caused by imperfection of technological process of silicon ingots growth, has led to the formation of point defects that, in turn, have led to formation of swirl defects.…”

Section: Resultsmentioning

confidence: 99%

Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

Смынтына¹

2009

Semicond. phys. quantum electron. optoelectron.

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The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in near-surface layers of oxidated monocrystalline silicon. It was shown that stacking faults are generated during the oxidation process, and the mechanism of their formation is connected with the defective layered structure of initial silicon wafers. It was established that defects of layered heterogeneity, on the one hand, lead to the formation of stacking faults and, on the other hand, prevent their propagation to the wafer bulk.

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Section: Resultsmentioning

confidence: 99%

Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

Смынтына¹

2009

Semicond. phys. quantum electron. optoelectron.

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“…Precipitates were detected and analyzed by transmission X-ray topography analysis, transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), secondary ion mass spectrometry (SIMS), and electron diffraction analysis. [2][3][4][5][6][7][8][9][10] The nitrogen in ambient was shown to play an important role in the precipitation of nitrided silicon.…”

Section: Introductionmentioning

confidence: 99%

Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Nakazawa¹,

Ogino²,

Teranishi³

et al. 2014

Jpn. J. Appl. Phys.

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A floating zone (FZ) silicon wafer produced from a Czochralski (CZ) single-crystal ingot was subjected to prolonged annealing at a high temperature in a N 2 (70%) + O 2 (30%) ambient. Precipitates were formed and their regions manifested themselves as dark concentric rings in an X-ray topograph. According to the results of cross-sectional transmission electron microscopy and energy-dispersive X-ray spectroscopy elemental analysis, nitrogen was distributed throughout the precipitate regions, while oxygen concentrated in the periphery of the regions. Fourier transform infrared spectroscopy analysis of the precipitate regions revealed that the concentration of nitrogen was high, while that of oxygen was low. A high nitrogen concentration was also directly detected by secondary ion mass spectrometry in the mid-depth of the wafer in the precipitate regions. Electron diffraction analysis of the precipitates showed that their phase was α-Si 3 N 4 . The number of precipitates detected by crosssectional X-ray topography increased with increasing annealing time. The precipitates were considered to originate from vacancies that can be eliminated by interstitial silicon.

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“…[7,8] A number of works on the structure and formation mechanism of the GMDs have been published in the last decades, [9][10][11][12][13] and all investigations show their dependence on the interstitial oxygen, which is one of the main impurities in Cz-silicon. Meanwhile, the development of new metallurgical refining and recycling technologies provides alternative feedstock for the PV industry.…”

Section: Introductionmentioning

confidence: 99%

Cz-Silicon Produced from Solar Grade and Recycled Materials. Part I: Bulk Properties and Formation of As-Grown Defects

Zhang

Øvrelid

Juel

et al. 2014

Metallurgical and Materials Transactions E

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The current paper is the first of two, investigating the properties of Czochralski-silicon (Cz-silicon) materials and solar cells produced with recycled and compensated silicon materials. In this work, impurity levels in two experimental Cz-silicon ingots were characterized by glow discharge mass spectroscopy and FTIR. The combined effects of these impurities on recombination properties were investigated by photoluminescence imaging and compared to bulk properties of a reference ingot. Ring pattern distribution of as-grown micro-defects in the ingots, related to elevated carbon and oxygen levels, were delineated based on the results of two steps of dry oxidation. Moreover, the mechanism of defect formation in the experimental Cz-Si during solidification and oxidation is elaborated in light of thermodynamic theories. Meanwhile, the positive effect of phosphorus in compensated feedstock is discussed in relation to the minority carrier lifetime based on the quasi-steady-state photoconductance results, as well as on the restricted formation of oxygen-related defects during solidification by analyzing samples after oxidation and copper decoration.

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Tentative analysis of Swirl defects in silicon crystals

Cited by 13 publications

References 7 publications

Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing

Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

Cz-Silicon Produced from Solar Grade and Recycled Materials. Part I: Bulk Properties and Formation of As-Grown Defects

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